Monolithic On-chip Integration of Electronics & Photonics Using III-nitrides for Telecoms
Lead Research Organisation:
University of Strathclyde
Department Name: Physics
Abstract
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Organisations
Publications
Amano H
(2020)
The 2020 UV emitter roadmap
in Journal of Physics D: Applied Physics
Bruckbauer J
(2020)
Influence of micro-patterning of the growth template on defect reduction and optical properties of non-polar (112¯0) GaN
in Journal of Physics D: Applied Physics
Hiller KP
(2023)
Imaging Threading Dislocations and Surface Steps in Nitride Thin Films Using Electron Backscatter Diffraction.
in Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
Trager-Cowan C
(2020)
Structural and luminescence imaging and characterisation of semiconductors in the scanning electron microscope
in Semiconductor Science and Technology
Zhao X
(2020)
Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11-22) green LEDs grown on silicon.
in Scientific reports
| Description | An electron microscope has been used to stimulate light-emission and electron diffraction from a range of layers that will be used in the targeted devices. The crystal structure and orientation is shown to have a major effect on the above properties. |
| Exploitation Route | The results have an important bearing on heterogeneous integration as discussed in the Heterogeneous Integration roadmap |
| Sectors | Digital/Communication/Information Technologies (including Software),Electronics,Energy |
| Description | The characterisation techniques have been advanced in a way that is useful to companies working on the fabrication of various semiconductor devices |
| First Year Of Impact | 2022 |
| Sector | Digital/Communication/Information Technologies (including Software),Electronics,Manufacturing, including Industrial Biotechology |
| Impact Types | Economic |
| Title | Data for: "Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11-22) green LEDs grown on silicon" |
| Description | This dataset provides the cathodoluminescence (CL) data used to generate figure 5 in the paper entitled "Influence of an InGaN superlattice pre-layer on the performance of semi-polar (11-22) green LEDs grown on silicon". The cathodoluminescence (CL) data discussed and presented in the paper was recorded using a variable pressure field emission scanning electron microscope (SEM, FEI Quanta 250) which is equipped with a custom-built CL hyperspectral imaging system. The CL system collects the emitted light at an angle of 45° with respect to the incident electron beam using a Cassegrain reflecting objective. The light is then dispersed using a 125 mm focal length spectrograph (Oriel MS125) and detected using an electron-multiplying charge-coupled device (Andor Newton). As the electron beam scans across the sample surface, a whole CL spectrum is recorded per pixel building up the 3D hyperspectral data set. 2D CL images can then be extracted from the hyperspectral data set, such as peak energy, intensity or half width. The room temperature CL measurements were acquired with a beam voltage of 5 kV. Abstract of the paper: It is well-known that it is crucial to insert either a single InGaN underlayer or an InGaN superlattice (SLS) structure (both with low InN content) as a pre-layer prior to the growth of InGaN/GaN multiple quantum wells (MQWs) served as an active region for a light-emitting diode (LED). So far, this growth scheme has achieved a great success in the growth of III-nitride LEDs on c-plane substrates, but has not yet been applied in the growth of any other orientated III-nitride LEDs. In this paper, we have applied this growth scheme in the growth of semi-polar (11-22) green LEDs, and have investigated the impact of the SLS pre-layer on the optical performance of semi-polar (11-22) green LEDs grown on patterned (113) silicon substrates. Our results demonstrate that the semi-polar LEDs with the SLS pre-layer exhibit an improvement in both internal quantum efficiency and light output, which is similar to their c-plane counterparts. However, the performance improvement is not so significant as in the c-plane case. This is because the SLS pre-layer also introduces extra misfit dislocations for the semi-polar, but not the c-plane case, which act as non-radiative recombination centres. |
| Type Of Material | Database/Collection of data |
| Year Produced | 2021 |
| Provided To Others? | Yes |
| Impact | demonstration of impact of a specific layer in a semi-polar LED |
| URL | https://pureportal.strath.ac.uk/en/datasets/a30b848c-c99e-43b6-89e8-0c5b939b64fc |