Portable Terahertz Systems Based on Advanced InP Technology - PORTRAIT
Lead Research Organisation:
University of Leeds
Department Name: Electronic and Electrical Engineering
Abstract
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Organisations
- University of Leeds (Lead Research Organisation)
- TeraView (United Kingdom) (Collaboration, Project Partner)
- National Physical Laboratory (Collaboration)
- Her Majesty's Government Communications (Collaboration)
- National Physical Laboratory (Project Partner)
- H M Government Communications (Project Partner)
Publications
Dazhang L
(2009)
On-chip terahertz Goubau-line waveguides with integrated photoconductive emitters and mode-discriminating detectors
in Applied Physics Letters
Wood C
(2010)
Terahertz emission from metal-organic chemical vapor deposition grown Fe:InGaAs using 830 nm to 1.55 µm excitation
in Applied Physics Letters
Hatem O
(2011)
Terahertz-frequency photoconductive detectors fabricated from metal-organic chemical vapor deposition-grown Fe-doped InGaAs
in Applied Physics Letters
Description | There are a large number of potential applications for terahertz spectroscopy and imaging systems. In the academic sector, these range from understanding the vibrational structures of crystalline materials, to probing the fundamental excitations in semiconductors and nanostructures. In the industrial sector, applications range from process monitoring in the pharmaceutical industry, through to non-destructive testing, security scanning, and medical engineering. Yet, traditionally, terahertz time-domain spectroscopy systems have used 800 nm Ti:sapphire laser-based technologies. Not only does this lead to higher system costs, but it also means that it is not possible to benefit from the wide range of components that are readily accessible at telecommunication wavelengths (around 1550 nm). The 'PORTRAIT' grant, comprising a collaboration between the University of Essex (PI), University of Leeds, University College London, the University of Bath, and the Centre for Integrated Photonics (CIP, formally Corning, and now Huawei) aimed to address this and develop terahertz sources and detectors operating at 1550 nm wavelength. The Leeds programme focused on developing pulsed photoconductive emitters and receivers operating at 1550 nm, using Fe-doped InGaAs and InGaAsP grown by MOCVD at CIP. Detailed characterization was undertaken of the materials as a function of wavelength (750 - 1600 nm) using a Ti:sapphire pumped OPO system, and photoconductive switches structures were designed, fabricated and tested for use both as emitters and receivers. The performance matched, and indeed exceeded, that obtained using low-temperature-grown GaAs at 800 nm, opening up the possibility of developing and exploiting terahertz spectroscopy and imaging systems based on telecommunications-based technology. The results were jointly patented by the University of Leeds and CIP. |
Exploitation Route | The patented, demonstration of 1550 nm components for generation and detection of terahertz frequency radiation led to the immediate award of an EPSRC Follow-on Fund grant (EP/H029583) to develop commercialization opportunities, and the subsequent award of an EPSRC programme grant (COTS; EP/J017671) with UCL, the University of Cambridge and the London Centre for nanotechnology to develop coherent terahertz frequency systems. It also supported the award of an ERC Advanced Grant (TOSCA). |
Sectors | Aerospace Defence and Marine Digital/Communication/Information Technologies (including Software) Electronics Pharmaceuticals and Medical Biotechnology Security and Diplomacy |
Description | H M Government Communications |
Organisation | Her Majesty's Government Communications |
Country | United Kingdom |
Sector | Public |
Start Year | 2006 |
Description | National Physical Laboratory |
Organisation | National Physical Laboratory |
Country | United Kingdom |
Sector | Academic/University |
Start Year | 2006 |
Description | Teraview Ltd |
Organisation | Teraview Ltd |
Country | United Kingdom |
Sector | Private |
Start Year | 2006 |
Title | Generating and Detecting Radiation |
Description | |
IP Reference | GB0912512.1 |
Protection | Patent application published |
Year Protection Granted | |
Licensed | No |