Near infrared single photon detection using Ge-on-Si heterostructures
Lead Research Organisation:
University of Warwick
Department Name: Physics
Abstract
Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
Organisations
Publications
Myronov M
(2012)
Epitaxial Growth of Tensile Strained SiB Alloy on a Si Substrate
Warburton R
(2013)
Ge-on-Si Single-Photon Avalanche Diode Detectors: Design, Modeling, Fabrication, and Characterization at Wavelengths 1310 and 1550 nm
in IEEE Transactions on Electron Devices
Description | Avalanche photo diodes demonstrated in a silicon based system. Some performance metrics exceed those for photo diodes made of other materials. Progress towards a single photon sensitivity and operation at room temperature. |
Exploitation Route | Devices could be used as photodetectors at communications and sensing wavelengths. |
Sectors | Digital/Communication/Information Technologies (including Software),Environment,Security and Diplomacy |
Description | Creating silicon based platforms for new technologies |
Amount | £1,680,000 (GBP) |
Funding ID | EP/J001074/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 03/2012 |
End | 02/2017 |