Entangling dopant nuclear spins using double quantum dots

Lead Research Organisation: University of Southampton
Department Name: Electronics and Computer Science

Abstract

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Publications

10 25 50
 
Description Fabrication yield reduction due to electrostatic in the silicon wafer. We have now improved our fabrication process to improve the device yield per silicon wafer and produced few dopants single electron transistors for low temperature experiment. Beneficiaries: Scientists, engineers and manufacturers working on low power logic devices for solid state memory and sensors.
Exploitation Route New fabrication approach to mitigate the electrostatic issues by introducing metallic discharge layer. We have introduced new annealing process for the diffusion of the dopants to create the few dopants single electron devices.
Sectors Digital/Communication/Information Technologies (including Software)

Electronics

Energy

Healthcare

Manufacturing

including Industrial Biotechology

 
Description Faculty of Physical Sciences and Engineering Postgraduate Scholarship
Amount £15,000 (GBP)
Organisation University of Southampton 
Sector Academic/University
Country United Kingdom
Start 09/2014 
End 09/2017
 
Description Research collaboration with Japan Advanced Institute of Science and Technology 
Organisation Japan Advanced Institute for Science and Technology
Country Japan 
Sector Private 
PI Contribution Joint research grant application to EPSRC-JSPS
Collaborator Contribution Research grant application to JSPS and PhD studentship
Impact PhD studentship exchange programme between JAIST and Southampton
Start Year 2012