Integration of RF Circuits with High Speed GaN Switching on Silicon Substrates

Lead Research Organisation: University of Manchester
Department Name: Electrical and Electronic Engineering

Abstract

Abstracts are not currently available in GtR for all funded research. This is normally because the abstract was not required at the time of proposal submission, but may be because it included sensitive information such as personal details.
 
Description The research has identified and devised techniques to operate power semiconductor devices at switching frequencies in the range 50 MHz to 200 MHz. This represents an increase of around one hundred times over typical operating frequencies. This increase in frequency will enable the power supply circuits for RF power amplifiers to provide a rapidly changing output voltage to the amplifier, resulting in an overall increase in system efficiency. The research has identified the most suitable converter topologies, gate drive circuits and control methods, with the multi-level approach offering distinct advantages. The results of the modelling and simulation work have been validated with off-the-shelf semiconductor components. The research is also investigating the interactions between the power supply and the RF amplifier. A number of unexpected patterns of behaviour have been identified and analysed, enabling the development of enhanced models for the supply modulator and the development of an overall system design and optimisation methodology.
Exploitation Route The most immediate applications will be in the next generation of mobile communications systems (5G), but more generally the techniques will also have applications in low-voltage power conversion systems where high performance (high efficiency and small size) are priorities. This includes the power supplies for many electronic devices and systems and potentially wireless charging systems.
Sectors Aerospace

Defence and Marine

Digital/Communication/Information Technologies (including Software)

Electronics

Energy

Transport
 
Description Using some of the circuit analysis and knowhow developed in the grant, an industrially funded PhD student is now working with company (Nexperia) on enhanced design and analysis techniques for the optimisation and application of power MOSFETs within the automotive sector. In addition, through underpinning and developing our academic research into next generation power semiconductor technologies, the work done in the grant has contributed to the formation of a new avenue of research into ultra-wide bandgap power devices using AlGaN, and the award of the ULTRAlGaN programme grant, which is led by Bristol.
First Year Of Impact 2023
Sector Electronics,Transport
Impact Types Economic
 
Description KTP
Amount £240,146 (GBP)
Funding ID KTP11288 
Organisation Innovate UK 
Sector Public
Country United Kingdom
Start 04/2019 
End 04/2022
 
Description KTP
Amount £240,146 (GBP)
Funding ID KTP11288 
Organisation TT-electronics Semelab 
Sector Private
Country United Kingdom
Start 04/2019 
End 04/2022
 
Description Ultrawide Bandgap AlGaN Power Electronics - Transforming Solid-State Circuit Breakers (ULTRAlGaN)
Amount £5,326,504 (GBP)
Funding ID EP/X035360/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 03/2024 
End 02/2029
 
Description AlGaN Power Devices 
Organisation University of Bristol
Country United Kingdom 
Sector Academic/University 
PI Contribution Development of programme grant proposal for next generation ultra-wide bandgap power devices. We are waiting for the funding decision. The Manchester contribution concerned the application and requirements of future power devices.
Collaborator Contribution Bristol - device design Cambridge - material growth
Impact Multi-disciplinary. No outcomes yet. Decision on funding expected imminently.
Start Year 2021
 
Description AlGaN Power Devices 
Organisation University of Cambridge
Country United Kingdom 
Sector Academic/University 
PI Contribution Development of programme grant proposal for next generation ultra-wide bandgap power devices. We are waiting for the funding decision. The Manchester contribution concerned the application and requirements of future power devices.
Collaborator Contribution Bristol - device design Cambridge - material growth
Impact Multi-disciplinary. No outcomes yet. Decision on funding expected imminently.
Start Year 2021
 
Description Envelope tracking consortium 
Organisation Cardiff University
Department School of Engineering
Country United Kingdom 
Sector Academic/University 
PI Contribution Provided understanding of the characteristics and performance limits of power converter circuits, including the impact of semiconductor device characteristics on system performance, and how best to design / control a converter to achieve the required envelope tracking performance.
Collaborator Contribution Development of optimised power semiconductor devices for very high frequency operation in a power converter (Sheffield) and an understanding of the performance requirements and trade-offs in envelope tracking applications (Cardiff).
Impact Too early for outcomes to have materialised.
Start Year 2017
 
Description Envelope tracking consortium 
Organisation University of Sheffield
Department Faculty of Engineering
Country United Kingdom 
Sector Academic/University 
PI Contribution Provided understanding of the characteristics and performance limits of power converter circuits, including the impact of semiconductor device characteristics on system performance, and how best to design / control a converter to achieve the required envelope tracking performance.
Collaborator Contribution Development of optimised power semiconductor devices for very high frequency operation in a power converter (Sheffield) and an understanding of the performance requirements and trade-offs in envelope tracking applications (Cardiff).
Impact Too early for outcomes to have materialised.
Start Year 2017
 
Description Hosting summer student interns 
Form Of Engagement Activity Participation in an open day or visit at my research institution
Part Of Official Scheme? No
Geographic Reach Local
Primary Audience Undergraduate students
Results and Impact Hosted two undergraduate student interns in the research group who worked on aspects of this research project. This enabled them to learn about research work and research careers in general and about the specific challenges and technology in this project.
Year(s) Of Engagement Activity 2019
 
Description Poster presentation at EPSRC Power Electronics Centre annual conference 
Form Of Engagement Activity Participation in an activity, workshop or similar
Part Of Official Scheme? No
Geographic Reach National
Primary Audience Professional Practitioners
Results and Impact Poster presentation by the project RA Alejandro Villarruel to raise the profile of the research within the community and highlight the achievements.
Year(s) Of Engagement Activity 2019
 
Description Wireless Power Week Discussion Panel 
Form Of Engagement Activity A talk or presentation
Part Of Official Scheme? No
Geographic Reach International
Primary Audience Professional Practitioners
Results and Impact Presentation and panel discussion on wide band-gap power device applications held at Wireless Power Week 2019. An IEEE / IET conference held at Savoy Place, London.
Year(s) Of Engagement Activity 2019