Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe)

Lead Research Organisation: University of Glasgow
Department Name: School of Engineering

Abstract

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Publications

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Crawford K (2022) High synergy atomic layer etching of AlGaN/GaN with HBr and Ar in Journal of Vacuum Science & Technology A

 
Description EPSRC-SFI Aluminium-Rich Nitride Electronics (ARNE)
Amount £597,833 (GBP)
Funding ID EP/X036901/1 
Organisation Engineering and Physical Sciences Research Council (EPSRC) 
Sector Public
Country United Kingdom
Start 01/2024 
End 12/2026