Gallium Nitride Smart Power Integrated Circuit Technology (GaN SPICe)
Lead Research Organisation:
Coventry University
Department Name: Ins for Future Transport & Cities
Abstract
Undeniably, there are numerous crystal materials that surpass Silicon based devices (such as Gallium Nitride, Silicon Carbide and Diamond), but the high cost of their manufacturing has always been the roadblock for their implementation in applications therefore nowadays Silicon dominates the semiconductor industry. Gallium nitride (GaN) is a more superior semiconductor to Silicon for RF and Power applications. The advantage of GaN is that it can be grown as a thin layer on top of a standard low-cost Silicon wafer (i.e. substrate) enabling a new power device family, Power High Electron Mobility Transistors (HEMTs) on Silicon. Power HEMTs are faster, compact in size, more efficient and comparable in price for converter applications to their aging Silicon counterparts. Similarly to Silicon power technology development (from discrete devices to smart power integrated circuits), the arrival of GaN-based integrated circuits, GaN power transistors monolithically integrated with Hall-effect and temperature sensors, GaN gate drivers and ASICs, will facilitate widespread use of gallium nitride technology for high-volume applications.
The GaN Smart Power Integrated Circuit Technology (GaN SPICe) project brings together the Universities of Coventry and Glasgow to investigate, develop and provide functional verification of the game-changing GaN smart power integrated technology; the group will be the 1st in the World to integrate a normally-off power GaN HEMT with advanced galvanic Hall-effect and temperature sensors. HEMT is a voltage controlled device and on-chip monitoring of its output current is critical for safe and long operation of an electronic system, similar to monitoring one's heart rate. The galvanic sensor is a GaN Hall-effect device accompanied by signal conditioning circuitry (with Coventry's filed patent application number 1913936.9), to minimise drift in sensor characteristics at elevated temperatures. This will increase functionality, enable a reduction of system volume, reduce cost of assembly, and as chip temperature can be actively compensated, improve reliability and efficiency of the power device. These are fundamental requirements for complex power electronics systems, in particular when installed in limited volume, hostile (high temperature/vibration) environments, such as battery electric and hybrid vehicles for example.
Coventry and Glasgow are uniquely positioned to make this project success, thanks to the track record and expertise of its academic and research staff, GaN power HEMT at Glasgow and GaN Hall-effect sensors at Coventry, and the investment in their laboratory facilities (clean room, design, and test and characterisation laboratories), making it one of very few research consortiums, in the UK and overseas, capable of providing innovation at every stage of this development.
The GaN Smart Power Integrated Circuit Technology (GaN SPICe) project brings together the Universities of Coventry and Glasgow to investigate, develop and provide functional verification of the game-changing GaN smart power integrated technology; the group will be the 1st in the World to integrate a normally-off power GaN HEMT with advanced galvanic Hall-effect and temperature sensors. HEMT is a voltage controlled device and on-chip monitoring of its output current is critical for safe and long operation of an electronic system, similar to monitoring one's heart rate. The galvanic sensor is a GaN Hall-effect device accompanied by signal conditioning circuitry (with Coventry's filed patent application number 1913936.9), to minimise drift in sensor characteristics at elevated temperatures. This will increase functionality, enable a reduction of system volume, reduce cost of assembly, and as chip temperature can be actively compensated, improve reliability and efficiency of the power device. These are fundamental requirements for complex power electronics systems, in particular when installed in limited volume, hostile (high temperature/vibration) environments, such as battery electric and hybrid vehicles for example.
Coventry and Glasgow are uniquely positioned to make this project success, thanks to the track record and expertise of its academic and research staff, GaN power HEMT at Glasgow and GaN Hall-effect sensors at Coventry, and the investment in their laboratory facilities (clean room, design, and test and characterisation laboratories), making it one of very few research consortiums, in the UK and overseas, capable of providing innovation at every stage of this development.
Organisations
- Coventry University (Lead Research Organisation)
- Compound Semiconductor Applications Catapult (Collaboration)
- National Instruments Corp (UK) Ltd (Collaboration)
- Oxford Instruments (United Kingdom) (Collaboration, Project Partner)
- INEX Microtechnology (Collaboration)
- 35Consult (Project Partner)
- Compound Semiconductor App. Catapult (Project Partner)
- National Instruments (United Kingdom) (Project Partner)
Publications
Marsic V
(2024)
GaN Transistors' Radiated Switching Noise Source Evidenced by Hall Sensor Experiments Toward Integration
in IEEE Access
Marsic V
(2022)
Coil Design for Integration with GaN Hall-Effect Sensors
Description | Researchers |
Geographic Reach | National |
Policy Influence Type | Influenced training of practitioners or researchers |
Title | Laboratory equipment |
Description | As a part of this project, we are designing and characterising Gallium Nitride magnetic sensor enabling next generation using our in-house tools. |
Type Of Material | Improvements to research infrastructure |
Year Produced | 2023 |
Provided To Others? | No |
Impact | We are enabling next generation of current sensing solutions for Power Electronics applications. However, the current infrastructure is not optimised for high switching frequency of wide bandgap devices. Therefore, we are upgrading our laboratory facilities such as magnetic stimulation system to add capabilities for harsh environment testing and high switching frequency. |
Title | Electromagnetic analysis |
Description | Through a preliminary 3D electromagnetic analysis, this study provides a methodology for optimising functionality of GaN Hall effect magnetic sensors in monolithic integration with a GaN power switch by investigating various coil designs. Additionally, the 3D analysis will be conducted with MATLAB's FEM solver, which is one of the most advanced tools that comes with default toolboxes capable to deliver electrostatic, magneto-static and harmonic simulations. |
Type Of Material | Computer model/algorithm |
Year Produced | 2022 |
Provided To Others? | Yes |
Impact | The electromagnetic model is the first ever built for designing coils playing a crucial role in sensing current for integration of power switches with current sensing element in power electronics circuities. The integration enables highly efficient, compact system switching at ultra speeds. |
URL | https://ieeexplore.ieee.org/document/9936109 |
Description | Compound Semiconductor Application Catapult |
Organisation | Compound Semiconductor Applications Catapult |
Country | United Kingdom |
Sector | Private |
PI Contribution | We share our expertise in design of single and integrated Gallium Nitride Hall effect sensors for power applications. |
Collaborator Contribution | Catapult offers valuable and beneficial insight, advice and guidance in characterisation and packaging aspects of the project. |
Impact | NA |
Start Year | 2021 |
Description | INEX Microtechnology |
Organisation | INEX Microtechnology |
Country | United Kingdom |
Sector | Private |
PI Contribution | We share expertise in design and integration of Hall effect magnetic sensors |
Collaborator Contribution | They offer steer to project direction, help with future commercial activities and advice on post processing strategies. |
Impact | NA |
Start Year | 2021 |
Description | National Instruments |
Organisation | National Instruments Corp (UK) Ltd |
Country | United Kingdom |
Sector | Private |
PI Contribution | We offer to share expertise in design of next generation current sensing technologies. |
Collaborator Contribution | They support project researcher with design and testing of the signal condition circuitry. They intend to offer partnership in this proposal by technical consultation, attendance of monthly project meeting (remotely or in person) and collaborate with the project team in writing a case study highlighting the research impact and the use of National Instrument's technology. |
Impact | NA |
Start Year | 2021 |
Description | Oxford Instruments |
Organisation | Oxford Instruments |
Country | United Kingdom |
Sector | Private |
PI Contribution | We share expertise in design and integration of Hall effect sensors with normally off Gallium Nitride HEMTs |
Collaborator Contribution | They support project via embedded researcher in University of Glasgow. This researcher supports the activities of this project by developing and processing the ALD and ALE layers in the fabrication GaN HEMT devices as well as contribute to characterisation and benchmarking. |
Impact | NA |
Start Year | 2021 |
Title | Magnetic field sensor |
Description | The patent describes how to maintain sensitivity of Hall effect sensors under different conditions |
IP Reference | US202017764117 |
Protection | Patent / Patent application |
Year Protection Granted | 2022 |
Licensed | No |
Impact | The patent enables use of Hall effect sensors under different operating conditions including harsh environments. The patent enables accuracy, adoptability, integrability and extension of use to meet increasing performance demands brought on by stricter regulatory standards such as net zero. |
Description | Marketing |
Form Of Engagement Activity | Engagement focused website, blog or social media channel |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Public/other audiences |
Results and Impact | We designed a website for the project to enhance engagement and outreach. The website get updated regularly with outputs from project team. |
Year(s) Of Engagement Activity | 2022 |
URL | https://www.ganspice.com |