Fast Switching Zincblende GaN LEDs
Lead Research Organisation:
University of Cambridge
Department Name: Materials Science & Metallurgy
Abstract
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Organisations
Publications
Xiu H
(2023)
Polarity determination of crystal defects in zincblende GaN by aberration-corrected electron microscopy
in Journal of Applied Physics
Wade T
(2023)
MOVPE studies of zincblende GaN on 3C-SiC/Si(0 0 1)
in Journal of Crystal Growth
Gundimeda A
(2022)
Investigation of wurtzite formation in MOVPE-grown zincblende GaN epilayers on AlxGa1-xN nucleation layers
in Journal of Applied Physics
Gundimeda A
(2022)
Influence of Al x Ga 1-x N nucleation layers on MOVPE-grown zincblende GaN epilayers on 3C-SiC/Si(001)
in Journal of Physics D: Applied Physics
Binks D
(2022)
Cubic GaN and InGaN/GaN quantum wells
in Applied Physics Reviews