Development of Techniques and Algorithms for IGBT Digital Active Gate Drives

This project falls within the EPSRC Energy research area, and is concerned with the development of active gate drive techniques for insulated-gate bipolar-transistors (IGBTs). Active gate drives are used to tailor the switching characteristics of power semiconductor devices. Precise control over the switching is desirable as it can be used to minimise switching losses, reduce both conducted and radiated electromagnetic interference (EMI), and enforce limits to the stresses applied to the semiconductor device.

Analogue techniques underpin the active gate drives in use today. Control of energy losses, EMI, and voltage transients is more feasible if the generation of a control response is conducted in the digital domain. Indeed, a digital closed-loop control system has the potential for implementing sophisticated and flexible control and protection measures under varying operating conditions.

The aim of this project is to develop a working proof-of-concept digital active gate drive for IGBTs, and to use this as a platform on which digital control techniques and optimisation routines can be explored and tested. Potential benefits of this work include the reduction of energy dissipation in power electronic converters using IGBTs, lowered heat dissipation requirements resulting in smaller, less costly converters, and a reduction in the voltage stresses applied to devices.