Silicon Based Qubits Using Quantum Dot Transistors

Lead Research Organisation: Imperial College London
Department Name: Electrical and Electronic Engineering

Abstract

The proposal of a quantum computer has generated a great deal of research in the development of qubit devices. In the proposed research, we investigate the characteristics of utra-small, < 10nm 'point contact' quantum dot transistors that operate at room temperature for the definition of qubits in silicon. While qubits can be implemented in a variety of different systems, silicon based qubits possess specific advantages. Silicon based qubits have
been shown to produce relatively long decoherence times and have the ability to integrate with CMOS and nano-technoogies. In addition, silicon based qubits can interface with the outside world due to conventional CMOS circuitry. This quality makes qubits in silicon a promising candidate for quantum computation and quantum technologies in general as it allows, not only the development of a purely quantum device, but also allows for the possibility of developing
hybrid quantum-classical devices. Moreover, as part of the investigation, we will simulate a variety quantum dot circuits to better understand their behaviour and influence in the formation of qubits. We will also fabricate and measure the characteristics of quantum dot devices that operate at room temperature. Following the fabrication and device measurements, any promising devices will be taken to the University of Cambridge for further testing and measurent of qubit properties, such as, qubit dechorence times. In parallel to this, we will develop a theoretical model that fully describes the energetics of silicon based qubits in quantum dot transistors.

Planned Impact

The main impact of the proposed Hub will be in training quantum engineers with a skillset to understand cutting-edge quantum research and a mindset toward developing this innovation, and the entrepreneurial skills to lead the market. This will grow the UK capacity in quantum technology. Through our programme, we nurture the best possible work force who can start new business in quantum technology. Our programme will provide multi-level skills training in quantum engineering in order to enhance the UK quantum technologies landscape at several stages. Through the training we will produce quantum engineers with training in innovation and entrepreneurship who will go into industry or quantum technology research positions with an understanding of innovation in quantum technology, and will bridge the gap between the quantum physicist and the classical engineer to accelerate quantum technology research and development. Our graduates will have to be entrepreneurial to start new business in quantum technology. By providing late-stage training for current researchers and engineers in industry, we will enhance the current landscape of the quantum technology industry. After the initial training composed of advanced course works, placements and short projects, our students will act as a catalyzer for collaboration among quantum technology researchers, which will accelerate the development of quantum technology in the UK. Our model actively encourages collaboration and partnerships between Imperial and national quantum tehcnology centres and we will continue to maintain the strong ties we have developed through the Centre for Doctoral Training in order to enhance our on-going training provisions. The Hub will also have an emphasis on industrial involvement. Through our new partnerships students will be exposed to a broad spectrum of non-academic research opportunities. An important impact of the Hub is in the research performed by the young researchers, PhD students and junior fellows. They will greatly enhance the research capacity in quantum technology. Imperial College has many leading engineers and quantum scientists. One of the important outcomes we expect through this Hub programme is for these academics to work together to translate the revolutionary ideas in quantum science to engineering and the market place. We also aim to influence industry and policy makers through our outreach programme in order to improve their awareness of this disruptive technology.

Publications

10 25 50

Studentship Projects

Project Reference Relationship Related To Start End Student Name
EP/P510257/1 01/04/2016 31/12/2022
1801493 Studentship EP/P510257/1 01/10/2016 31/03/2021 Faris Abualnaja
 
Description As part of this research, a device that is able to control the flow of a single electron at room temperature (300K) is made. Single electron devices, generally, only work at very low temperatures (~1K) due to the material used. In our published work, we were able to prove that phosphorous atoms embedded in an insulator (SiO2 - silicon dioxide) can function as a single electron device at room temperature. This is an important step towards the realisation of silicon based quantum-bits (qubits), where trapping an electron using conventional techniques allows for the potential initialisation, control and read-out of a quantum state (e.g. electron charge or electron spin that can be used to define a qubit).
Exploitation Route The outcomes of this award will pave ways for continued research in engineering and physics departments for the scaling of quantum computers using standard nano-fabrication techniques and limiting the need for large dilution refrigerators for the realisation of qubits. In addition, the fabrication outcomes and techniques described in our published works can be used for further research in spintronics and single-electron memory.
Sectors Electronics