Integration of Silicon Germanium to a Silicon Photonics Platform
Lead Research Organisation:
University of Southampton
Department Name: Optoelectronics Research Ctr (closed)
Abstract
The variety of SiGe compositions commonly target specific applications and most of the methods used to grow compound material only allow to achieve a single composition on a specific layer within an epitaxy process step. A novel epitaxy method based on liquid phase epitaxy (LPE) or rapid melt growth (RMG) gives the unique possibility of more than one SiGe composition across the wafer and makes possible to have more than one type of SiGe based device using just one deposition and one anneal step.
The aim of this PhD project is to use the RMG epitaxy method to fabricate waveguide integrated devices such as detector or modulator. It is expected that the RMG process will reduce the defect density and give enough good quality material for the integration. The process development and integration of the RMG method of SiGe on SOI and the fabrication of SiGe waveguides is therefore the target of the currently conducted work.
Silicon photonics is currently an expanding platform for the integration of optics and electronic circuits. In a time of increasing demand for faster and more efficient interconnects, the substantial amount of research data available for silicon in electronics facilitates the migration of interconnect technology towards CMOS compatible photonic devices and systems
Silicon germanium is a promising material for such high performance telecommunication devices. Thanks to its physical properties and fabrication methods previously demonstrated using rapid melt growth (RMG) enabling crystal composition engineering, it is possible to design cutting-edge devices with this material.
The fabrication process for the integration of the SiGe RMG to SOI to form Si to Ge and SiGe waveguides transition is in progress. Masks have been designed in order to provide enable the waveguide integration process following earlier process development tests. The new integration process being developed is an efficient and fast way to achieve this aim. This report is a review of the project progress throughout the last 8 months of my work as a PhD student at the University of Southampton within Silicon Photonics group.
The aim of this PhD project is to use the RMG epitaxy method to fabricate waveguide integrated devices such as detector or modulator. It is expected that the RMG process will reduce the defect density and give enough good quality material for the integration. The process development and integration of the RMG method of SiGe on SOI and the fabrication of SiGe waveguides is therefore the target of the currently conducted work.
Silicon photonics is currently an expanding platform for the integration of optics and electronic circuits. In a time of increasing demand for faster and more efficient interconnects, the substantial amount of research data available for silicon in electronics facilitates the migration of interconnect technology towards CMOS compatible photonic devices and systems
Silicon germanium is a promising material for such high performance telecommunication devices. Thanks to its physical properties and fabrication methods previously demonstrated using rapid melt growth (RMG) enabling crystal composition engineering, it is possible to design cutting-edge devices with this material.
The fabrication process for the integration of the SiGe RMG to SOI to form Si to Ge and SiGe waveguides transition is in progress. Masks have been designed in order to provide enable the waveguide integration process following earlier process development tests. The new integration process being developed is an efficient and fast way to achieve this aim. This report is a review of the project progress throughout the last 8 months of my work as a PhD student at the University of Southampton within Silicon Photonics group.
People |
ORCID iD |
Frederic Gardes (Primary Supervisor) | |
Katarzyna Grabska (Student) |
Publications

Chen Y
(2017)
Experimental demonstration of an apodized-imaging chip-fiber grating coupler for Si_3N_4 waveguides
in Optics Letters

Debnath K
(2017)
Ultrahigh-Q photonic crystal cavities in silicon rich nitride.
in Optics express

F. J. Runge
(2017)
Laser-assisted material composition engineering of SiGe planar waveguides

F. Y. Gardes
(2017)
Group IV compounds and silicon nitride for multiplatform integrated photonics

K. Grabska
(2017)
SiGe compound for compact high speed electroabsorption modulators

K. Grabska
(2016)
Silicon-Germanium for photonics applications

Katarzyna Monika Grabska
(2020)
Silicon-germanium by Rapid Melt Growth for the Silicon-On-Insulator Platform

L. Mastronardi
(2017)
High-speed Si/GeSi hetero-structure Electro Absorption Modulator
Studentship Projects
Project Reference | Relationship | Related To | Start | End | Student Name |
---|---|---|---|---|---|
EP/N509747/1 | 30/09/2016 | 29/09/2021 | |||
1921136 | Studentship | EP/N509747/1 | 04/01/2016 | 29/06/2019 | Katarzyna Grabska |
Description | The SiGe structures with varied composition (multiple composition across the same sample) obtained from the Rapid Melt Growth (RMG) processed on the SOI platform. |
Exploitation Route | further work linked to the RMG, waveguide integration, possible patents |
Sectors | Electronics |
Description | Processing with the research paper, results presented over conferences, all described within the PhD thesis submitted last year |
Sector | Electronics |
Description | Chemical Mechanical Polishing |
Organisation | VTT Technical Research Centre of Finland Ltd |
Country | Finland |
Sector | Academic/University |
PI Contribution | - |
Collaborator Contribution | Chemical Mechanical Polishing conducted in the clean room of VTT. |
Impact | Confidential agreement signed |
Start Year | 2016 |
Description | Ge and SiGe deposition work |
Organisation | Polytechnic University of Milan |
Department | Laboratory for Nanostructure Epitaxy and Spintronics on Silicon |
Country | Italy |
Sector | Private |
PI Contribution | Providing samples/ wafers for further work |
Collaborator Contribution | Ge and SiGe deposition and XRD measurements of the Si content |
Impact | still active, too early to say |
Start Year | 2018 |
Title | OPTOELECTRONIC DEVICE AND METHOD OF MANUFACTURING THEREOF |
Description | An optoelectronic device and method of manufacturing the same. The device includes: a layer disposed above a substrate, the layer having a first cavity therein, which cavity is at least partially defined by an inclined interface between the cavity and an insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°; and a regrown semiconductor material, providing or forming a part of a waveguide, the regrown semiconductor material being at least partly disposed in the first cavity and including an inclined interface between the regrown semiconductor material and the insulating liner, the interface being disposed at an angle relative to the substrate of greater than 0° and less than or equal to 90°. |
IP Reference | WO2018224621 |
Protection | Patent application published |
Year Protection Granted | 2018 |
Licensed | No |
Impact | the possible further application based on the patent |
Description | OSA Foundation Diversity and Inclusion Grant 2019 |
Form Of Engagement Activity | A formal working group, expert panel or dialogue |
Part Of Official Scheme? | No |
Geographic Reach | Local |
Primary Audience | Public/other audiences |
Results and Impact | Received grant was used to promote diversity and inclusion within STEM |
Year(s) Of Engagement Activity | 2019 |
Description | School Visit, Science Festival with the cleanroom tour |
Form Of Engagement Activity | Participation in an activity, workshop or similar |
Part Of Official Scheme? | No |
Geographic Reach | Regional |
Primary Audience | Schools |
Results and Impact | Pupils (Year up to 11) attended a school visit to the research cleanrooms and laboratories where optoelectronics devices, e.g. associated with the award, are fabricated. Afterwards, discussion about research and science related was conducted. The impact of these activities was evaluated via forms filled by students at the end of the visit. |
Year(s) Of Engagement Activity | 2016,2017,2018 |
Description | Woman in Optics SPIE grant |
Form Of Engagement Activity | Participation in an activity, workshop or similar |
Part Of Official Scheme? | No |
Geographic Reach | Local |
Primary Audience | Public/other audiences |
Results and Impact | outreach/cleanroom visit event for the International Women in Engineering Day celebration (June 2019) for female pupils (15-18 years old) keen on science, in order to convince them to consider a STEM based career. This tour has been run successfully by OPSoc in the past. - coffee and cake event with a panel disccussion about the role of woman in Optics/Science and challengess due to a gender, for general public and the university community - International Women's Day celebration (March 2019) with a lecture presented by a female scientist working in the Optics - a stand during the university's Festival of Science to inform the general public, especially primary school children, about various women in STEAM subjects -International Day of Light - a small art competition for female school pupils which can help to interest them in Science |
Year(s) Of Engagement Activity | 2018,2019 |