Heusler spin Field Effect Transistor (spinFET)
Lead Research Organisation:
University of York
Department Name: Physics
Abstract
My project investigates a novel spinFET design. The device consists of a low loss Heusler alloy material as the ferromagnetic electrode, a doped Ge/SiGe quantum well as the spin channel, and a metal gate with a high spin-orbit interaction for enhancing the voltage control of the spins in the spin channel via the Rashba effect. By the growth of the Heusler/Ge/SiGe heterostructure and engineering the atomic layers of the gate stack, the aim is to achieve enhanced spin injection efficiency and manipulation providing the largest change in resistance between logic states "1" and "0".
Organisations
People |
ORCID iD |
| Irene Azaceta (Student) |
Studentship Projects
| Project Reference | Relationship | Related To | Start | End | Student Name |
|---|---|---|---|---|---|
| EP/N509802/1 | 01/10/2016 | 31/03/2022 | |||
| 1925143 | Studentship | EP/N509802/1 | 01/10/2017 | 31/03/2021 | Irene Azaceta |
| Description | I have optimized the growth of halfmetalic Heusler Co2FeSi on semiconductor substrates such as Si and doped SrTiO3. Obtaining ordered Heusler electrodes and controlled interface is the challenging part required to make spin devices, such as spinFET. |
| Exploitation Route | Findings of this research can be used by other reserach groups in spintronics both in UK and internationally, as well as semiconducting companies that are aiming to create logic devices based on spintronics. |
| Sectors | Electronics |