Silicon double quantum dot device technologies for spin-based quantum information processing applications via spin-blockade
Lead Research Organisation:
University of Southampton
Department Name: Electronics and Computer Science
Abstract
Using unique silicon double quantum dot devices, as well as other novel QD devices currently under fabrication, one objective is to observe Spin-Blockade, and therefore demonstrate that spin can be manipulated and controlled in these devices, with the ambition of benchmarking our devices in spin-blockade electron transport applications, in collaboration with RIKEN Institute. Then, building on this, another project objective is to explore electron spin interactions between quantum dots to gain a deeper understanding of the coupling between states, in collaboration with industrial partner Hitachi-Cambridge Laboratory on the development of spin-qubit devices.
People |
ORCID iD |
| YOSHISHIGE TSUCHIYA (Primary Supervisor) | |
| Joseph Hillier (Student) |
Publications
F.Liu
(2018)
Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate
in Institute of physics: Nanotechnology
Hillier J
(2021)
Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors
in Nanotechnology
Hillier J
(2021)
Investigating stability and tunability of quantum dot transport in silicon MOSFETs via the application of electrical stress
in Journal of Physics D: Applied Physics
Ibukuro K
(2020)
Silicon single-electron random number generator based on random telegraph signals at room temperature
in AIP Advances
Ibukuro K
(2020)
Random telegraph signals caused by a single dopant in a metal-oxide-semiconductor field effect transistor at low temperature
in AIP Advances
Ibukuro K
(2019)
Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature
in Frontiers in Physics
K. Ibukuro
(2019)
Single Electron Memory Effect Using Random Telegraph Signals at Room Temperature
in Frontiers in Physics
Liu F
(2018)
Manipulation of random telegraph signals in a silicon nanowire transistor with a triple gate.
in Nanotechnology
Studentship Projects
| Project Reference | Relationship | Related To | Start | End | Student Name |
|---|---|---|---|---|---|
| EP/R512187/1 | 30/09/2017 | 29/09/2021 | |||
| 1952186 | Studentship | EP/R512187/1 | 30/09/2017 | 30/11/2021 | Joseph Hillier |
| Description | The quantum devices investigated as part of this work led to publications which will benefit future quantum computing research as well as bridging the gap between the fabrication of industry compatible and novel research devices. |
| Exploitation Route | One key insight is from the use of defects (present in silicon transistors fabricated by industrial foundries) to control single charges for quantum information applications. This means that the expensive and intensive fabrication processes to produce novel quantum devices may not be needed if defects present in ordinary silicon devices can function as a quantum device under the correct circumstances. |
| Sectors | Digital/Communication/Information Technologies (including Software),Electronics,Energy,Manufacturing, including Industrial Biotechology |
| Description | Manufacturing Quantum Nano-LEGO Blocks for Electronics, Photonics, and Phononics Integrated Systems |
| Amount | £1,095,170 (GBP) |
| Funding ID | EP/M008975/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 03/2015 |
| End | 03/2020 |
| Description | The RIKEN Institute |
| Organisation | RIKEN |
| Department | RIKEN Chief Scientist Laboratories |
| Country | Japan |
| Sector | Private |
| PI Contribution | For this collaboration our group provided silicon-nanowire devices and well as silicon transistors which were measured jointly. |
| Collaborator Contribution | Ono-san at the Advanced device laboratory provided teaching on how to prepare samples for measurement as well as a operate a liquid helium cryostat. Consumables were also provided in the form of liquid helium refills, sample holders and low temperature conducting paste. As Ono-san is an expert in the field of single spin sensing using quantum dots and a pioneer of spin-blockade, he also provided valuable expertise on measurement protocols on how to detect magnetic field dependant phenomenon and spin related artefacts. These measurement protocols are now being used at Southampton to study spin blockade of double quantum dots and single charge traps. |
| Impact | One output is how Well voltage can be used to tune a device in order for spin-blockade to occur in a silicon double quantum dot transistor. This novel approach is currently being drafted as a paper to be submitted to an IOP journal. |
| Start Year | 2018 |