Novel transfer printing techniques for fabrication of III-nitride semiconductor devices.

This project aims to develop novel transfer printing techniques to enable the fabrication of flexible III-nitride optoelectronic devices such as visible LEDs and lasers. The work will involve developing lift-off processes using stressor layers deposited on the surface of III-nitride materials and embedded strain engineered layers to separate the active region from the growth substrate enabling transfer printing. Transfer printing processes will be developed by applying smart stamp designs to improve the utility and yield of the transfer printing process to enable novel optoelectronic devices to be manufactured. The applications of this research are in developing new visible light LEDs to be applied in areas such as display technology.