SIMPLE tool for single ion implantation in the IBC
Lead Research Organisation:
University of Surrey
Department Name: ATI Electronics
Abstract
Following installation and
testing the machine should be ready for use in the summer. This project is designed to make first use of this machine
developing the methodologies that will be required to exploit it fully in the area of quantum technologies. Prototype device
structures based on single ion implantation of P, Bi and Co will be carried out to further develop and understand the
capabilities of the instrument.
testing the machine should be ready for use in the summer. This project is designed to make first use of this machine
developing the methodologies that will be required to exploit it fully in the area of quantum technologies. Prototype device
structures based on single ion implantation of P, Bi and Co will be carried out to further develop and understand the
capabilities of the instrument.
People |
ORCID iD |
| David Cox (Primary Supervisor) | |
| Mateus Gallucci-Masteghin (Student) |
Publications
Chapman G
(2022)
Focused electron beam deposited silicon dioxide derivatives for nano-electronic applications
in Materials Science in Semiconductor Processing
Masteghin M
(2021)
Stress-strain engineering of single-crystalline silicon membranes by ion implantation: Towards direct-gap group-IV semiconductors
in Physical Review Materials
Studentship Projects
| Project Reference | Relationship | Related To | Start | End | Student Name |
|---|---|---|---|---|---|
| EP/N509772/1 | 30/09/2016 | 29/09/2021 | |||
| 2116075 | Studentship | EP/N509772/1 | 30/09/2018 | 29/09/2021 | Mateus Gallucci-Masteghin |
| Description | The main discovery directly related to the objectives of this award is the development of a new facility to manufacture liquid metal alloy ions sources (LMAIS) at the University of Surrey. This facility will supply the single ion implanter and help to achieve different impurity species. In addition, a new methodology has been developed to allow the sharpening of LMAIS tips. This methodology uses focused ion beam microscopes as a "pencil sharpener" that allows the creation of different tip geometries from any wire material, differently from traditional electrochemical etching. Here, it must be noted that the tip geometry will influence the stability of the ion emission and prolong the LMAIS life span. Therefore, the combination of both will allow a wider portfolio of implantation species with greater stability at a lower cost. |
| Exploitation Route | The outcomes of this funding are already taken forward. They led to a new Innovate UK-funded project (in collaboration with instrument manufacturer) that is expanding the LMAIS development facility to achieve new source compositions, along with 2 EPSRC New Horizons programs that also utilise the new facility. This facility is also retained in the UK National Ion Beam Centre and is used to supply the in-house and external demand for the single ion implanter. |
| Sectors | Electronics Other |
| Description | Route to high-precision positioning of single ion-implanted impurities in silicon |
| Amount | £186,759 (GBP) |
| Funding ID | EP/X018989/1 |
| Organisation | University of Surrey |
| Sector | Academic/University |
| Country | United Kingdom |
| Start | 01/2023 |
| End | 06/2024 |
| Description | Strained germanium photonic crystal membranes for scalable and efficient silicon-based photonic devices |
| Amount | £202,399 (GBP) |
| Funding ID | EP/V048732/1 |
| Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
| Sector | Public |
| Country | United Kingdom |
| Start | 06/2021 |
| End | 07/2023 |
| Title | New facility to develop liquid metal alloy ion sources at the University of Surrey (Ion Beam Centre) |
| Description | During this funding period, I have developed a new facility to manufacture liquid metal alloy ion sources that supply the single ion implanter available at the University of Surrey. This single ion implanter was developed aided by another EPSRC grant (EP/N509772/1). |
| Type Of Material | Improvements to research infrastructure |
| Year Produced | 2019 |
| Provided To Others? | No |
| Impact | The facility allowed starting developing sources of interest (i.e., available species for ion implantation) that will allow future developments in quantum technologies. |
| URL | https://uknibc.co.uk/UserDay/single_post.php?post-slug=fib-sources-manufacturing-exotic-lm-a-is-for-... |
| Description | ESRF ID01 - University of Surrey (ATI) |
| Organisation | European Synchrotron Radiation Facility |
| Country | France |
| Sector | Charity/Non Profit |
| PI Contribution | We, at the Advanced Technology Institute (University of Surrey), used the ion beam-induced strain technique discovered during the funding period to prepare samples and send them to the collaborator for investigation. |
| Collaborator Contribution | The collaborator carried out microdiffraction measurements that helped us to support the results observed via micro-Raman. |
| Impact | The manuscript using the data supplied by the collaborator is still under preparation and the research outcome will be updated as soon as a DOI is generated for the journal article. |
| Start Year | 2022 |
| Title | STRESS-STRAIN ENGINEERING OF SEMICONDUCTOR MEMBRANES |
| Description | A semiconductor structure comprising: a semiconductor membrane, the semiconductor membrane having at least one amorphised area and an active area, wherein the at least one amorphised area is adjacent the active area such that the at least one amorphised area exerts strain on the active area and a method of introducing strain into a crystalline semiconductor membrane by ion implantation. |
| IP Reference | WO2022223962 |
| Protection | Patent / Patent application |
| Year Protection Granted | 2022 |
| Licensed | No |
| Impact | This patent describes a new methodology that enables to generate high tensile strain in suspended single-crystal thin films. It reports on important parameters that must be taken into account such as membrane thickness and ion implantation specie and energy. We believe that this technique can lead to direct bandgap tin-doped germanium crystals. |