Atomistic simulations of Magnetoresistive Random Access Memory

MRAM is a promising technology to implement a universal non-volatile memory technology at all levels of a computer memory architecture, from registers and caches to bulk storage. This project will determine the ultimate scalability of MRAM devices down to the few nm limit by combining state-of-the-art spin dynamics and molecular dynamics modelling. We will investigate the role of thermal magnetic effects, magnetic switching dynamics and the role of structural defects on device performance and speed. This may lead to optimal device designs for fast performance, high thermal stability and ultimate scalability and density.