Characterisation and manipulation of strain in halide perovskite semiconductors

Halide perovskites are a promising material class for semiconductor applications, especially in optoelectronic devices. Strain can be present in films of these materials on multiple different length scales and has been associated with non-radiative losses in devices. Using synchrotron X-ray techniques (such as ptychography and BCXDI), as well as more conventional X-ray measurements, we aim to visualise the chemical and structural properties of strain gradients. This, in combination with time-resolved luminescence tomography measurements for mapping charge carrier diffusion and ionic motion, will help us to understand the role strain plays in these devices. Once this is achieved, it may also be possible to manipulate the strain gradients through device processing.