Ga2O3 electronics for zero carbon emission technologies

Beta-phase Gallium Oxide (Ga2O3) has become a promising material for power electronics
application due to its wide bandgap (4.9 eV) and high breakdown field (8 MV/cm). However,
due to its flat valence band maximum and high mobility, it has been challenging to achieve acceptor type doping. Nitrogen doped Ga2O3 has shown p-type nature by creating deep level states. The activation of N-doped Ga2O3 is poor, therefore mostly n-type material is used in devices. Recent first principle studies have revealed that co-doping with Al/In-N could may create shallow acceptor levels. Experimental methods to back this result has not yet been conducted. In this project, we investigate the use of n-type materials for next generation power devices as well as explore properties of new p-type materials and its limitations. New device structures will be designed with the aid of TCAD simulations and implemented; some elements of materials growth will be explored.

This work addresses EPSRC's cross-ICT priorities, in particular People at the Heart of ICT (aiding people to deliver improved power systems and energy savings), and Cross-Disciplinarity and Co-Creation (collaboration across physicists, material scientists, engineers, and end users). It is aligned with the growth areas of Materials for Energy Applications, and the maintain area of Microelectronic Device Technology, and will enable a Resilient and Productive Nation (R1: Achieve energy security and efficiency, P1: Introduce the next generation of innovative and disruptive technologies, P2: Ensure affordable solutions for National needs) by developing a new generation of electronic power devices. The innovative, disruptive technologies will form the fundamental basis for the UK to evolve on its pathway to a Prosperous Nation.