>2um InP- and Si-based InAs(Sb) quantum dot materials and devices.
Lead Research Organisation:
University College London
Department Name: Electronic and Electrical Engineering
Abstract
Mid-infrared semiconductor lasers with emission wavelength of 2-2.5um have been recognized as a promising technology in many applications, such as molecular spectroscopy, gas monitoring, and medical diagnostics. InP- and Si-based InAs(Sb) quantum dot materials and devices will provide a sophisticated solution for mid-infrared optical sources.
People |
ORCID iD |
| Huiyun Liu (Primary Supervisor) | |
| Yangqian Wang (Student) |
Studentship Projects
| Project Reference | Relationship | Related To | Start | End | Student Name |
|---|---|---|---|---|---|
| EP/S024441/1 | 01/07/2019 | 31/12/2027 | |||
| 2876280 | Studentship | EP/S024441/1 | 01/10/2022 | 30/09/2026 | Yangqian Wang |