Measurement and control of scalable unit cell in a Si-MOS planar device on a 300 mm wafer
Lead Research Organisation:
UNIVERSITY COLLEGE LONDON
Department Name: London Centre for Nanotechnology
Abstract
Quantum computing using quantum dots in silicon holds the potential to enable highly scalable architectures and manufacturing.
Due to the widespread use of silicon in conventional electronics, industrial silicon manufacturing processes on a 300 mm wafer are highly advanced. Therefore, the use of these processes is desirable for scaling quantum computer manufacture in the future.
Furthermore, quantum dot devices can be manufactured at a length scale of < 100 nm, enabling highly compact architectures. The footprint of the device can be reduced by sensing using a single electron box (SEB) rather than the single electron transistor (SET) which is typically used.
This PhD will investigate quantum dot measurement and control using novel architectures utilising SEB structures for sensing. These novel architectures constitute scalable unit cells; later stages of the PhD may involve the design of scalable 2D architectures based on these unit cells.
Due to the widespread use of silicon in conventional electronics, industrial silicon manufacturing processes on a 300 mm wafer are highly advanced. Therefore, the use of these processes is desirable for scaling quantum computer manufacture in the future.
Furthermore, quantum dot devices can be manufactured at a length scale of < 100 nm, enabling highly compact architectures. The footprint of the device can be reduced by sensing using a single electron box (SEB) rather than the single electron transistor (SET) which is typically used.
This PhD will investigate quantum dot measurement and control using novel architectures utilising SEB structures for sensing. These novel architectures constitute scalable unit cells; later stages of the PhD may involve the design of scalable 2D architectures based on these unit cells.
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