High Operating Temperature, QD Semiconductor Laser

Following recent advances made by the Cardiff-UCL team in the design, growth and fabrication of so called co-doped quantum dot lasers we see an opportunity to develop a world record breaking operating temperature for a QD laser.

Laser diodes are used for a variety of light source applications in sensing and communications and operating at high temperature and in a manner where the threshold current is independent of temperature is particularly valuable as it significantly reduces the complexity of the control electronics.

We have access to advanced design models to create an active region structure targeted at high and temperature insensitive operation while maintaining a small footprint and applications useable power output. Progress is likely to requires iterations of epitaxial growth and fabrication to optimise performance. Advances in the fabrication of the laser cavity to maximise output in a single direction and to minimise optical loss are likely to be necessary to achieve the very highest temperature.