Manufacturability of integrated Photonic Quantum Emitter Devices

Quantum technologies has been regarded as one of the most important prior future technologies. There are several ways of implementing quantum technologies. Among them, quantum photonics, which
involves using single photons to process data, will be crucial for advancing quantum technology. It will directly enhance the security of future telecommunications networks. Therefore, we need a single photon source (SPS) and ensure the photon to be indistinguishable. Several ways will enable the generation photon, and two commonly used strategies are single quantum emitters like quantum dots or defect based colour centre of diamond as well as the heralded photon source using nonlinear optics. This proposal will leverage III-V semiconductor quantum dots (QDs), which are the fastest quantum emitters known and can produce photons at rates exceeding GHz. The advantage of III-V semiconductor devices lies in their advanced photonic patterning capabilities, which allow for the creation of complex integrated photonic circuits. Like other platforms of quantum technologies nowadays, quantum photonics also face the difficulty of scaling. Fundamental issues with the generation and routing of single photons in quantum photonic circuits result in photon loss and information processing errors. For quantum dot, the most well-studied structures are vertical emission with open cavity design, which means it will be reliable to make a quantum dot with high quality, but it still leaves challenges of scalable manufacture of multiple quantum dots with similar properties as well as minimising noises when we integrate the quantum dots into photonic devices. This project will face these challenges and achieve the scalability of manufacture of the quantum dot based photonic devices.