Bias Temperature Instability and Junction Temperature Measurement Using Electrical Parameters in SiC Power MOSFETs (2021)
Attributed to:
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/tia.2020.3045120
Publication URI: http://dx.doi.org/10.1109/tia.2020.3045120
Type: Journal Article/Review
Parent Publication: IEEE Transactions on Industry Applications
Issue: 2