Unipolar and Bipolar Pulsed Gate Stresses and Threshold Voltage Shifts in GaN e-HEMTs (2022)
Attributed to:
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/ecce50734.2022.9947415
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85144088340
Type: Conference/Paper/Proceeding/Abstract