Non-Intrusive Methodologies for Characterization of Bias Temperature Instability in SiC Power MOSFETs (2020)
Attributed to:
Reliability, Condition Monitoring and Health Management Technologies for WBG Power Modules
funded by
EPSRC
Abstract
No abstract provided
Bibliographic Information
Digital Object Identifier: http://dx.doi.org/10.1109/irps45951.2020.9129637
Publication URI: https://api.elsevier.com/content/abstract/scopus_id/85088385616
Type: Conference/Paper/Proceeding/Abstract