Single Event Effects in Resistive Random Access Memory Using Amorphous SiC
Lead Research Organisation:
University of Southampton
Department Name: Sch of Electronics and Computer Sci
Abstract
Resistive random access memory (ReRAM) are structures that exhibit both a low resis-
tance and high resistance states when a specic voltage bias is placed across the cell. In
this report a focus on the use of silicon carbide based cells has been conducted, due to
its high resistive ratio and wide use in the back end of the line fabrication.
tance and high resistance states when a specic voltage bias is placed across the cell. In
this report a focus on the use of silicon carbide based cells has been conducted, due to
its high resistive ratio and wide use in the back end of the line fabrication.
Organisations
Studentship Projects
| Project Reference | Relationship | Related To | Start | End | Student Name |
|---|---|---|---|---|---|
| EP/P510646/1 | 30/09/2016 | 29/09/2021 | |||
| 2388128 | Studentship | EP/P510646/1 | 02/04/2017 | 01/04/2021 | Omesh Kapur |