Single Event Effects in Resistive Random Access Memory Using Amorphous SiC

Lead Research Organisation: University of Southampton
Department Name: Sch of Electronics and Computer Sci

Abstract

Resistive random access memory (ReRAM) are structures that exhibit both a low resis-
tance and high resistance states when a specic voltage bias is placed across the cell. In
this report a focus on the use of silicon carbide based cells has been conducted, due to
its high resistive ratio and wide use in the back end of the line fabrication.

Publications

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Studentship Projects

Project Reference Relationship Related To Start End Student Name
EP/P510646/1 30/09/2016 29/09/2021
2388128 Studentship EP/P510646/1 02/04/2017 01/04/2021 Omesh Kapur