Spintronic device physics in Si/Ge Heterostructures

Lead Research Organisation: University of Southampton
Department Name: Electronics and Computer Science

Abstract

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Description Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni
contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used
to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate
electron spin transport and electrical extraction from the Ge layer at room temperature.
Exploitation Route Spin transport is a key component for quantum computers that operate on the principle of spin entanglement
Sectors Electronics