Spintronic device physics in Si/Ge Heterostructures
Lead Research Organisation:
University of Southampton
Department Name: Electronics and Computer Science
Abstract
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Organisations
Publications
Dong L
(2012)
Electro-Deposited PdNi-Si Schottky Barrier Hydrogen Sensors with Improved Time Response
in Procedia Engineering
Fan J
(2016)
Microstructure and electrical properties of co-sputtered Cu embedded amorphous SiC
in Materials Letters
Huang R
(2016)
Forming-free resistive switching of tunable ZnO films grown by atomic layer deposition
in Microelectronic Engineering
Huang R
(2016)
Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition.
in Scientific reports
Long Tao Dong (Author)
(2014)
Effect of interfacial PdNi concentration on time response of Si-based electrodeposited hydrogen sensors
Morgan K
(2015)
Switching kinetics of SiC resistive memory for harsh environments
in AIP Advances
Usgaocar A
(2012)
Low power hydrogen sensors using electrodeposited PdNi-Si Schottky diodes
in Sensors and Actuators B: Chemical
Wang Y
(2012)
Helium ion beam milling to create a nano-structured domain wall magnetoresistance spin valve.
in Nanotechnology
| Description | Spin-dependent transport is investigated in a Ni/Ge/AlGaAs junction with an electrodeposited Ni contact. Spin-polarized electrons are excited by optical spin orientation and are subsequently used to measure the spin dependent conductance at the Ni/Ge Schottky interface. We demonstrate electron spin transport and electrical extraction from the Ge layer at room temperature. |
| Exploitation Route | Spin transport is a key component for quantum computers that operate on the principle of spin entanglement |
| Sectors | Electronics |