Resistive switches (RRAM) and memristive behaviour in silicon-rich silicon oxides
Lead Research Organisation:
University of Glasgow
Department Name: School of Engineering
Abstract
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Organisations
People |
ORCID iD |
| Asen Asenov (Principal Investigator) |
Publications
Sadi T
(2018)
Investigation of resistance switching in SiO x RRAM cells using a 3D multi-scale kinetic Monte Carlo simulator.
in Journal of physics. Condensed matter : an Institute of Physics journal
| Description | Understanding and modelling the operation of RRAM memory cells. |
| Exploitation Route | Use in commercial TCAD software. |
| Sectors | Electronics |
| Description | Contributed to the development of commercial TCAD tools by Gold Standard Simulations and Synopsys. Contribution to IP development by Semiwise. |
| Sector | Electronics |
| Impact Types | Economic |