NSF: An investigation into the properties of B12As2, B4C and their heterostructures
Lead Research Organisation:
University of Bristol
Department Name: Physics
Abstract
The properties of the boron-rich icosahedral boride semiconductors B12As2 and B4C lie at the extremes in many categories such as high melting temperatures, hardness, and Seebeck coefficients. Consequently, this novel material class is attractive for applications such as high temperature as well as space electronics, neutron detectors, thermoelectronics and betavoltaic cells, the latter ones for the conversion of heat and nuclear energy, respectively, to electrical energy. A collaborative research effort between Kansas State University, SUNY and Bristol University is proposed to advance the synthesis and characterization of these new materials, as detailed insight is necessary to understand the effects of growth parameters on the structure and composition, and their effects on properties. The US side of the work would be supported by NSF, the UK side by EPSRC with corresponding proposals submitted to NSF and EPSRC. At Kansas State University, the materials will be grown as epitaxial films, bulk crystals and heterostructures. At SUNY, detailed structural characterizations will be performed to understand defect and defect generation in this new material system. At the University of Bristol, Raman scattering, optical and thermopower characterization will determine the properties of this new material system. We will be the first to combine the icosahedral borides into heterostructures to realize new properties to create new applications with potential great benefit to, for example, high temperature thermoelectric applications.
People |
ORCID iD |
Martin Kuball (Principal Investigator) |
Publications
Chen H
(2008)
Defect structures in B12As2 epitaxial layers grown on (0001) 6H-SiC
in Journal of Applied Physics
Gong Y
(2010)
Demonstration of boron arsenide heterojunctions: A radiation hard wide band gap semiconductor device
in Applied Physics Letters
Bakalova S
(2010)
Electronic excitations in B 12 As 2 and their temperature dependence by vacuum ultraviolet ellipsometry
in Journal of Physics: Condensed Matter
Bakalova S
(2010)
Energy band structure and optical response function of icosahedral B 12 As 2 : A spectroscopic ellipsometry and first-principles calculational study
in Physical Review B
Chen H
(2008)
Single-crystalline B12As2 on m-plane (11¯00) 15R-SiC
in Applied Physics Letters
Gong Y
(2010)
Thermal conductivity and Seebeck coefficients of icosahedral boron arsenide films on silicon carbide
in Journal of Applied Physics
Description | This US-UK programme developed successfully a new material class of boride semiconductors, suitable for beta batteries and neutron detectors. Device demonstrators were illustrated, based on the materials developed. |
Exploitation Route | Border-control & security screening applications; nuclear power station monitoring. Potentially spin-off company based on follow on results, likely in the field of border control & security screening. |
Sectors | Electronics Energy |
Description | Demonstration of first full boride electronics based neutron detector, demonstrated to UK MoD and AWE. |
First Year Of Impact | 2011 |
Sector | Aerospace, Defence and Marine |
Impact Types | Economic |