Electrically Pumped Broad Band and Vertical Cavity Semiconductor Dilute Nitride Amplifiers for Metro and Acess Networks
Lead Research Organisation:
University of Essex
Department Name: Computer Sci and Electronic Engineering
Abstract
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Organisations
People |
ORCID iD |
Naci Balkan (Principal Investigator) | |
Michael Adams (Co-Investigator) |
Publications
Chaqmaqchee F
(2011)
GaInNAs-based Hellish-vertical cavity semiconductor optical amplifier for 1.3 µm operation
in Nanoscale Research Letters
Description | Conventional VCSOAs based on GaInNAs/GaAs for electrical pumping require very sophisticated fabrication techiques, with a small gain. Optical pumping appears to give the best results. Best GaInNAs VCSOA devices operated by electrical injection are based on a design that utilizes longitudinal transport. |
Exploitation Route | It may be used by industry in telecom applications Publication in scientific journals, presentation at high profile conferences |
Sectors | Electronics |