Silicon emission technologies based on nanocrystals

Lead Research Organisation: University of Surrey
Department Name: ATI Electronics

Abstract

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Description Fabrication techniques for Si NC formation in oxide nitride materials system to optimize the luminescent properties of the NC
we were able to improve the incorporation of erbium into silicon oxide with applications to telecomms market. The use of Bismuth as a light emitter was shown to be ineffective due to out diffusion. The use of rapid thermal processing was shown to control the size of silicon nanocrystals and tune their emission wavelength
Exploitation Route Solid characterization data of influence of process conditions on the luminescent properties of NC films synthesized by ion implantation.
could be of use in the photovoltaic field, the process developed has been used by the US renewable energy laboratory for improved energy harvesting in Silicon based solar cells
Sectors Agriculture

Food and Drink

Digital/Communication/Information Technologies (including Software)

Electronics

Pharmaceuticals and Medical Biotechnology

 
Description The findings in this grant detail the fabrication conditions and doping strategy for Si NC material system for maximized luminescence.
First Year Of Impact 2013
Sector Electronics,Manufacturing, including Industrial Biotechology
Impact Types Societal