Half-metallic ferromagnets: materials fundamentals for next-generation spintronics
Lead Research Organisation:
University of York
Department Name: Physics
Abstract
Semiconductors (such as silicon) underpin so many aspects of modern life, through electronics and data processing for the WWW, telecoms, medicine, transport, etc., that it is hard to overstate their importance. However, silicon chip technology is approaching hard physical limits and alternatives are needed. One radical approach is spintronics, where the both the "spin" and charge of electrons are used for data storage and processing. Spin is a fundamental property of electrons related to magnetism: in a magnetic field, a spin prefers to align in one of two ways, along or against the field. Full utilisation of spin would enable revolutionary new chip designs, which are fast, energy-efficient and fully integrate data storage with logic.
We will study half-metallic ferromagnetic (HMF) materials. HMFs are a class of materials discovered theoretically in the 1980s which combine the properties of a semiconductor and a ferromagnetic metal. Only one of the two electron spin alignments can easily move inside an HMF - they are "100% spin-polarised". They should hence be ideal materials for use in spintronics. However, despite major research efforts to make HMF devices, in most cases HMFs do not outperform ordinary magnetic materials (which are typically 30-40% spin-polarised). There is no clear understanding of why this is the case, which prevents the potential of HMFs being unlocked for advanced spintronics. We propose to solve this outstanding problem with a comprehensive and rigorous study of HMFs in the physical form which is actually used in devices, i.e. in thin-films on an oxide or semiconductor substrate.
We will combine our expertise in four areas: (1) production of high quality thin films of HMFs, (2) characterisation of magnetic thin films down to the atomic level, (3) accurate theoretical description of these materials, and (4) fabrication of HMF spintronic devices. This will enable us to study holistically the most likely culprits for weakened HMF performance, namely temperature, defects and the HMF /substrate interface. Spin-polarisation collapses as an HMF heats up, and this cut-off, for a practical device, must be well above room temperature. We will measure this explicitly and model it with state-of-the-art theory developed recently in Warwick. Residual defects in the thin films can destroy spin polarisation and we will both understand these via atomic-scale imaging / modelling and adjust our thin film growth to minimise them. Finally, there must always be an interface between the HMF and its substrate, which also influences the spin polarisation and functional performance. We will image and model the interfaces, and again adjust our growth to optimise them. Atomic-scale imaging and analysis is possible using cutting-edge aberration-corrected electron microscopes (York and Warwick each have such a microscope, with complementary capabilities). Finally, this fundamental work will be correlated with the functional performance of the HMFs in prototypical spintronic devices. We will be able to fabricate devices, using established designs, and subsequently measure the atomic-scale interfaces and defects on the actual device structure.
This unique combination of capabilities ranging from first-principles theory to device performance will enable the first comprehensive and rigorous study of half-metallicity in real thin film structures. Our goals are to understand in a fundamental way the limitations of HMFs in real structures, to guide future HMF device design, and also develop the highest possible room temperature spin polarisation in HMF thin films. Between York and Warwick, we have growth expertise in three different classes of HMF material (transition metal pnictides, magnetite and Heusler alloys) which will enable us both to produce a generalised understanding of HMFs and find the best materials for ultra-high spin polarisation films.
We will study half-metallic ferromagnetic (HMF) materials. HMFs are a class of materials discovered theoretically in the 1980s which combine the properties of a semiconductor and a ferromagnetic metal. Only one of the two electron spin alignments can easily move inside an HMF - they are "100% spin-polarised". They should hence be ideal materials for use in spintronics. However, despite major research efforts to make HMF devices, in most cases HMFs do not outperform ordinary magnetic materials (which are typically 30-40% spin-polarised). There is no clear understanding of why this is the case, which prevents the potential of HMFs being unlocked for advanced spintronics. We propose to solve this outstanding problem with a comprehensive and rigorous study of HMFs in the physical form which is actually used in devices, i.e. in thin-films on an oxide or semiconductor substrate.
We will combine our expertise in four areas: (1) production of high quality thin films of HMFs, (2) characterisation of magnetic thin films down to the atomic level, (3) accurate theoretical description of these materials, and (4) fabrication of HMF spintronic devices. This will enable us to study holistically the most likely culprits for weakened HMF performance, namely temperature, defects and the HMF /substrate interface. Spin-polarisation collapses as an HMF heats up, and this cut-off, for a practical device, must be well above room temperature. We will measure this explicitly and model it with state-of-the-art theory developed recently in Warwick. Residual defects in the thin films can destroy spin polarisation and we will both understand these via atomic-scale imaging / modelling and adjust our thin film growth to minimise them. Finally, there must always be an interface between the HMF and its substrate, which also influences the spin polarisation and functional performance. We will image and model the interfaces, and again adjust our growth to optimise them. Atomic-scale imaging and analysis is possible using cutting-edge aberration-corrected electron microscopes (York and Warwick each have such a microscope, with complementary capabilities). Finally, this fundamental work will be correlated with the functional performance of the HMFs in prototypical spintronic devices. We will be able to fabricate devices, using established designs, and subsequently measure the atomic-scale interfaces and defects on the actual device structure.
This unique combination of capabilities ranging from first-principles theory to device performance will enable the first comprehensive and rigorous study of half-metallicity in real thin film structures. Our goals are to understand in a fundamental way the limitations of HMFs in real structures, to guide future HMF device design, and also develop the highest possible room temperature spin polarisation in HMF thin films. Between York and Warwick, we have growth expertise in three different classes of HMF material (transition metal pnictides, magnetite and Heusler alloys) which will enable us both to produce a generalised understanding of HMFs and find the best materials for ultra-high spin polarisation films.
Planned Impact
1. What is the background to this research project?
Silicon technology has been spectacularly successful, supporting an information revolution which has profoundly affected almost every aspect of life in the developed world. However, silicon devices are approaching the ultimate limits of miniaturisation meaning that improvements in processing speed, memory capacity and energy efficiency are slowing down. In a silicon chip, electric charges (electrons) are moved at high speeds. This requires quite a lot of energy and limits the speed at which information can be processed (so, for example, laptops can get very hot and their batteries can run out quickly). But we could instead manipulate the "spin" of electrons to process and store information, which might take as little as a hundredth of the energy. This is called "spintronics", and the development of advanced spintronic devices promises continued progress in information technology (IT), with a huge reduction in its energy demands. We will make, investigate and learn how to optimise a particular family of materials which should be ideal for making new and efficient spintronic devices.
2. Who could benefit from our research?
The long-term beneficiaries of our research will be consumers and the general public, who could benefit from advances in efficient IT, through information processing and storage technology built using materials developed in this project (e.g. more powerful mobile devices with far longer battery life or computers which do not need a lengthy boot-up to start). Environmental benefits would arise particularly from improved energy efficiency in large-scale IT (e.g. data centres supporting WWW services). Our work will help to attract continuing R&D investment to the UK from global companies in the IT hardware sector, and boost the innovation capacity of UK-based companies in the field of spintronics. The project will also benefit public understanding of science via specific engagement activities planned around our use of ultra-powerful microscopes capable of "seeing atoms" inside materials. Finally, the younger researchers working on our project will develop a broad skills base so that they will be extremely well placed to develop careers in or beyond the academic / high-tech commercial sectors.
3. How will we promote these benefits?
To realise the long-term technology benefits of the project, we will need to engage with industrial researchers. We have a substantial network of existing industry collaborators in, for example, the data storage sector, and will invite industrial researchers to our regular progress meetings and to a larger 1-day meeting to be organised in the second year. Our work will also feed into another EPSRC-funded spintronics project in which we are involved, with its own key industrial R&D partner. The younger researchers on our project will take on short industry placements, aiding both commercial engagement and their personal skills portfolios. The project covers an unusually broad range of experimental and theoretical techniques, giving the early-career researchers great opportunities for networking and development of wider technical competences. They will also benefit from training in transferable skills and public engagement, further boosting their employability and career options. The Physics Departments at Warwick and York have active schools outreach programmes, and the project team will participate in specific activities such as the "World of Physics" annual event in York and schools visits to the Microscopy suite run by the Ogden Trust Physics Teacher-Fellow in Warwick.
Silicon technology has been spectacularly successful, supporting an information revolution which has profoundly affected almost every aspect of life in the developed world. However, silicon devices are approaching the ultimate limits of miniaturisation meaning that improvements in processing speed, memory capacity and energy efficiency are slowing down. In a silicon chip, electric charges (electrons) are moved at high speeds. This requires quite a lot of energy and limits the speed at which information can be processed (so, for example, laptops can get very hot and their batteries can run out quickly). But we could instead manipulate the "spin" of electrons to process and store information, which might take as little as a hundredth of the energy. This is called "spintronics", and the development of advanced spintronic devices promises continued progress in information technology (IT), with a huge reduction in its energy demands. We will make, investigate and learn how to optimise a particular family of materials which should be ideal for making new and efficient spintronic devices.
2. Who could benefit from our research?
The long-term beneficiaries of our research will be consumers and the general public, who could benefit from advances in efficient IT, through information processing and storage technology built using materials developed in this project (e.g. more powerful mobile devices with far longer battery life or computers which do not need a lengthy boot-up to start). Environmental benefits would arise particularly from improved energy efficiency in large-scale IT (e.g. data centres supporting WWW services). Our work will help to attract continuing R&D investment to the UK from global companies in the IT hardware sector, and boost the innovation capacity of UK-based companies in the field of spintronics. The project will also benefit public understanding of science via specific engagement activities planned around our use of ultra-powerful microscopes capable of "seeing atoms" inside materials. Finally, the younger researchers working on our project will develop a broad skills base so that they will be extremely well placed to develop careers in or beyond the academic / high-tech commercial sectors.
3. How will we promote these benefits?
To realise the long-term technology benefits of the project, we will need to engage with industrial researchers. We have a substantial network of existing industry collaborators in, for example, the data storage sector, and will invite industrial researchers to our regular progress meetings and to a larger 1-day meeting to be organised in the second year. Our work will also feed into another EPSRC-funded spintronics project in which we are involved, with its own key industrial R&D partner. The younger researchers on our project will take on short industry placements, aiding both commercial engagement and their personal skills portfolios. The project covers an unusually broad range of experimental and theoretical techniques, giving the early-career researchers great opportunities for networking and development of wider technical competences. They will also benefit from training in transferable skills and public engagement, further boosting their employability and career options. The Physics Departments at Warwick and York have active schools outreach programmes, and the project team will participate in specific activities such as the "World of Physics" annual event in York and schools visits to the Microscopy suite run by the Ogden Trust Physics Teacher-Fellow in Warwick.
Publications
Gilks D
(2014)
A STEM study of twin defects in Fe 3 O 4 (111)/YZO(111)
in Journal of Physics: Conference Series
Hasnip P
(2013)
Ab initio studies of disorder in the full Heusler alloy Co2FexMn1-xSi
in Journal of Applied Physics
Hirohata A
(2023)
Antiferromagnetic Films and Their Applications
in IEEE Access
Gilks D
(2016)
Atomic and electronic structure of twin growth defects in magnetite.
in Scientific reports
Gilks D
(2015)
Atomic study of Fe3O4/SrTiO3 Interface
in Microscopy and Microanalysis
Ghasemi A
(2016)
Atomic-level structural and chemical analysis of Cr-doped Bi2Se3 thin films.
in Scientific reports
McKenna KP
(2014)
Atomic-scale structure and properties of highly stable antiphase boundary defects in Fe3O4.
in Nature communications
Nedelkoski Z
(2016)
Controlling the half-metallicity of Heusler/Si(1 1 1) interfaces by a monolayer of Si-Co-Si.
in Journal of physics. Condensed matter : an Institute of Physics journal
Duran E
(2023)
Correlated electron diffraction and energy-dispersive X-ray for automated microstructure analysis
in Computational Materials Science
Achinuq B
(2018)
Correlation between spin transport signal and Heusler/semiconductor interface quality in lateral spin-valve devices
in Physical Review B
Lari L
(2014)
Correlations between atomic structure and giant magnetoresistance ratio in Co 2 (Fe,Mn)Si spin valves
in Journal of Physics D: Applied Physics
Frost W
(2021)
Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation.
in Scientific reports
Yin H
(2021)
Defect-correlated skyrmions and controllable generation in perpendicularly magnetized CoFeB ultrathin films
in Applied Physics Letters
Burrows C
(2016)
Depth sensitive X-ray diffraction as a probe of buried half-metallic inclusions
in physica status solidi (b)
Alhuwaymel T
(2015)
Direct band-gap measurement on epitaxial Co2FeAl0.5Si0.5 Heusler-alloy films
in Journal of Applied Physics
Achinuq B
(2018)
Effect of annealing on the structure and magnetic properties of Co2FeAl0.5Si0.5 thin films on Ge(111)
in Journal of Alloys and Compounds
Yamada S
(2021)
Electric field tunable anisotropic magnetoresistance effect in an epitaxial Co 2 Fe Si / Ba Ti O 3 interfacial multiferroic system
in Physical Review Materials
Beevers J
(2018)
Enhanced magnetoelectric effect in M-type hexaferrites by Co substitution into trigonal bi-pyramidal sites
in Applied Physics Letters
Lu X
(2019)
Enhancement of intrinsic magnetic damping in defect-free epitaxial Fe3O4 thin films
in Applied Physics Letters
Burrows C
(2019)
Epitaxial growth and surface reconstruction of CrSb(0001)
in Results in Physics
Ghasemi A
(2016)
Experimental and density functional study of Mn doped Bi2Te3 topological insulator
in APL Materials
Wallace S
(2015)
Facet-Dependent Electron Trapping in TiO 2 Nanocrystals
in The Journal of Physical Chemistry C
Matsuzaki K
(2012)
Fe 3 O 4 (1 1 1) thin films with bulk-like properties: growth and atomic characterization
in Journal of Physics D: Applied Physics
Mousley P
(2018)
Growth and characterisation of MnSb(0 0 0 1)/InGaAs(1 1 1)A epitaxial films
in Journal of Crystal Growth
Bárcena-González G
(2019)
HAADF-STEM Image Resolution Enhancement Using High-Quality Image Reconstruction Techniques: Case of the Fe 3 O 4 (111) Surface
in Microscopy and Microanalysis
Kudo K
(2021)
Half-metallic nature of the low-temperature grown Co2MnSi films on SrTiO3
in Journal of Alloys and Compounds
Hirohata A
(2022)
Heusler alloys for metal spintronics
in MRS Bulletin
Elphick K
(2021)
Heusler alloys for spintronic devices: review on recent development and future perspectives
in Science and Technology of Advanced Materials
Hirohata A
(2013)
Heusler-alloy films for spintronic devices
in Applied Physics A
Burrows C
(2018)
Hybrid Heteroepitaxial Growth Mode
in physica status solidi (a)
Kelley CS
(2014)
Investigating the magnetic field-dependent conductivity in magnetite thin films by modelling the magnetorefractive effect.
in Journal of physics. Condensed matter : an Institute of Physics journal
Glover SE
(2018)
Magnetic and structural depth profiles of Heusler alloy Co2FeAl0.5Si0.5 epitaxial films on Si(1 1 1).
in Journal of physics. Condensed matter : an Institute of Physics journal
Gilks D
(2013)
Magnetism and magnetotransport in symmetry matched spinels: Fe3O4/MgAl2O4
in Journal of Applied Physics
Nawa K
(2021)
Modification of the van der Waals interaction at the Bi 2 Te 3 and Ge(111) interface
in Physical Review Materials
Gilks D
(2013)
Origin of anomalous magnetite properties in crystallographic matched heterostructures: Fe3O4(111)/MgAl2O4(111).
in Journal of physics. Condensed matter : an Institute of Physics journal
Nedelkoski Z
(2017)
Origin of reduced magnetization and domain formation in small magnetite nanoparticles.
in Scientific reports
Gilks D
(2016)
Polar Spinel-Perovskite Interfaces: an atomistic study of Fe3O4(111)/SrTiO3(111) structure and functionality.
in Scientific reports
HIROHATA A
(2015)
POLYCRYSTALLINE CO-BASED FULL-HEUSLER-ALLOY FILMS FOR SPINTRONIC DEVICES
in SPIN
Nedelkoski Z
(2016)
Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0.5Al0.5/Ge(111).
in Scientific reports
Hirohata A
(2020)
Review on spintronics: Principles and device applications
in Journal of Magnetism and Magnetic Materials
Hirohata A
(2015)
Roadmap for Emerging Materials for Spintronic Device Applications
in IEEE Transactions on Magnetics
Hirohata A
(2015)
Roadmap for Emerging Materials for Spintronic Device Applications
Tsukahara M
(2019)
Room-temperature local magnetoresistance effect in n -Ge devices with low-resistive Schottky-tunnel contacts
in Applied Physics Express
Kelley C
(2017)
Spatially resolved variations in reflectivity across iron oxide thin films
in Journal of Magnetism and Magnetic Materials
Oberdick SD
(2018)
Spin canting across core/shell Fe3O4/MnxFe3-xO4 nanoparticles.
in Scientific reports
Baker AA
(2016)
Spin pumping in magnetic trilayer structures with an MgO barrier.
in Scientific reports
Migliorini A
(2018)
Spontaneous exchange bias formation driven by a structural phase transition in the antiferromagnetic material.
in Nature materials
Gilks D
(2014)
Structural study of Fe 3 O 4 (111) thin films with bulk like magnetic and magnetotransport behaviour
in Journal of Applied Physics
Love C
(2021)
Substrate dependent reduction of Gilbert damping in annealed Heusler alloy thin films grown on group IV semiconductors
in Applied Physics Letters
Description | Half-metallic ferromagnets are novel type of materials which conductivity depends of the spin polarisation, e.g. they are insulating for spin up but conductive for spin down electrons or vice versa. This property makes them to be ideal spin sources for data and logic spintronic applications. The key findings in this project are the following: 1) Halfmetallicity is strongly correlates to the disorder in Heusler alloys as well as extended defects such as anti-phase domain boundary in magnetite films. 2) Thermal treatments can substantially improve the halfmetallic properties. We have demonstrated almost bulk like behaviour in Fe3O4 thin films, as well as in various Heusler films. 3) Spin injection from halfmetallic materials into relevant semiconductor materials ( e.g. Si and Ge) have been studied and details. The structural and chemical abruptness of the half-metal/Si(Ge) interfaces is key for efficient spin injection into semiconductor material. We have achieved abrupt Co2FeAlSi/Ge interface and have shown that spin injection is significant into Ge. During the project we have delved close collaborations with number of spintronics groups in Japan both experimental and theoretical. These includes: Prof. Hamaya group at Osaka University, Prof. Nakumura group at Mie University, Dr. Matsuzaki at Tokyo Institute of Technology, Dr Oogane at Tohoku University, and Prof. Ikuhara group at Tokyo University. We have also hosted number of world leading scientist in the field of magnetism and spintronics at York. This includes, Prof. Weinert from UWM-USA, Prof. Li from UVW-USA, Prof. Nakamura from Mie-University-Japan, prf. Sarah Majetic from Carnegie Mellon University- USA. We have developed growth systems and growth methods for halfmetallic thin film heterostructures, which open pathway for new collaborations and increasing the impact on these materials in various applications from harvesting energy by spin-Seebeck devices to spin valves. |
Exploitation Route | The outcomes of this project can be used to facilitate the used if halfmetalls for both scientific/fundamental applications as well as new applications in the new fields such as antiferromagnetic spintronics and spin caloritronics. |
Sectors | Digital/Communication/Information Technologies (including Software) Education |
Description | Our findings are currently utilised into fabrication of plan spin injection devices. These devices are first step into realisation of spin transistor at room temperature. |
Sector | Digital/Communication/Information Technologies (including Software),Electronics |
Impact Types | Societal |
Description | International Exchange Grant |
Amount | £11,900 (GBP) |
Organisation | The Royal Society |
Sector | Charity/Non Profit |
Country | United Kingdom |
Start | 03/2017 |
End | 03/2019 |
Description | JSPS Core-to-Core Programme |
Amount | £856,000 (GBP) |
Funding ID | EP/M02458X/1 |
Organisation | Engineering and Physical Sciences Research Council (EPSRC) |
Sector | Public |
Country | United Kingdom |
Start | 03/2015 |
End | 03/2020 |
Description | Research Studentship |
Amount | £60,000 (GBP) |
Organisation | University of York |
Sector | Academic/University |
Country | United Kingdom |
Start | 09/2016 |
End | 09/2019 |
Description | Strategic PhD studenship |
Amount | £60,000 (GBP) |
Organisation | University of York |
Sector | Academic/University |
Country | United Kingdom |
Start | 08/2015 |
End | 09/2018 |
Description | Strategic PhD studentship |
Amount | £60,000 (GBP) |
Organisation | University of York |
Sector | Academic/University |
Country | United Kingdom |
Start | 01/2014 |
End | 01/2017 |
Description | Strategic PhD studentship |
Amount | £60,000 (GBP) |
Organisation | University of York |
Sector | Academic/University |
Country | United Kingdom |
Start | 01/2014 |
End | 01/2017 |
Description | Cadiz |
Organisation | University of Cadiz |
Country | Spain |
Sector | Academic/University |
PI Contribution | Materials growth, experimental data collection, structure determination |
Collaborator Contribution | Develop computer algorithms and scripts for image analysis |
Impact | We have jointly published several publications in peer reviewed journals. |
Start Year | 2013 |
Description | Halfmetal Semiconductor heterostructure |
Organisation | Osaka University |
Department | Center for Spintronics Research Network |
Country | Japan |
Sector | Academic/University |
PI Contribution | We have shown that atomically, chemically and magnetically sharp interfaces between full Heusler halfmetalic alloys and Ge are feasible. Based on experimentally derived atomistic models we have shown that spin polarisation at Co2FeAlSi/Ge can be preserved, which is the condition for efficient spin injection into Ge. Also we have shown that by suitable control of atomic structure at Heulser/Si interfaces spin polarisation can be also preserved at this interface. |
Collaborator Contribution | Prof. Hamaya group from Osaka are developing spin injection devices in Si and Ge using full Heusler alloys as a spin injector electrode. They do the device fabrication and perform device functionality measurments i.e. non-local spin injection ito both Si and Ge. Jointly we are aiming to fully describe what effect good and efficient spin injection into both Ge and Si. |
Impact | We have published 4 joint publication and one is submitted. 1. The antiphase boundary in half-metallic Heusler alloy Co2Fe (Al, Si): atomic structure, spin polarization reversal, and domain wall effects 2. Controlling the half-metallicity of Heusler/Si (1 1 1) interfaces by a monolayer of Si-Co-Si 3.The role of chemical structure on the magnetic and electronic properties of Co2FeAl0. 5Si0. 5/Si (111) interface 4. Realisation of magnetically and atomically abrupt half-metal/semiconductor interface: Co2FeSi0. 5Al0. 5/Ge (111) |
Start Year | 2015 |
Description | Nagoya |
Organisation | Nagoya University |
Country | Japan |
Sector | Academic/University |
PI Contribution | Material growth, data analysis |
Collaborator Contribution | Experimental infrastructure, e.g. electron microscopy |
Impact | Joint research publications, and exchange of knowledge and experiance |
Start Year | 2013 |
Description | TIT |
Organisation | Tokyo Institute of Technology |
Country | Japan |
Sector | Academic/University |
PI Contribution | Structural analysis and mode;l;ing of half-metal oxides |
Collaborator Contribution | Pulsed Laser Deposition of half-metal oxides |
Impact | Joint research publications. Transfer of knowledge and expertise between the groups. |
Start Year | 2013 |
Description | UWM |
Organisation | University of Wisconsin-Milwaukee |
Country | United States |
Sector | Academic/University |
PI Contribution | Materials growth and analysis with focus on atomistic models of the interfaces and defects commonly met in halfmetals which are crucial when those materials are used in devices. |
Collaborator Contribution | Materials growth and Electronic and total energy calculations on half-metals and topological insulators. |
Impact | Exchange of knowledge and expertise, and joint research publications. |
Start Year | 2013 |
Description | Warwick halfmetal colloboration |
Organisation | University of Warwick |
Department | Department of Physics |
Country | United Kingdom |
Sector | Academic/University |
PI Contribution | We provide the research group in Warwick with half metal specimens (Heuslers and magnetite). Also we exchange expertise and knowledge on theoretical calculations and carried out joint experiments. |
Collaborator Contribution | Warwick has provide us with MnSb and NiMnSb specimens, also they took lead on polarised neutron reflection experiments. |
Impact | joint publications Joint experiments |
Start Year | 2013 |
Description | 'Atomic Structure and Magnetic Properties of Co2FeAl0.5Si0.5 Thin Films on Ge(111) as a Function of Annealing Temperature' talk presented on international confgerence |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk presented on Magnetism and Magnetic Materials, Pittsburgh, USA, November 2017 |
Year(s) Of Engagement Activity | 2017 |
Description | 'Atomic and electronic structure study of a Co2FeAl0.5Si0.5 half-metal thin film on Si (111)' |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk presented on Microscopy and Microanalysis, Columbus, USA, July 2016 |
Year(s) Of Engagement Activity | 2016 |
Description | 'Fe3O4 thin films with bulk like magnetic and magnetotransport behaviour' |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk presented Annual Conference on Magnetism and Magnetic Materials, Denver CO, Nov. 2013 |
Year(s) Of Engagement Activity | 2013 |
Description | 'Origin of reduced magnetization and domain formation in small magnetite nanoparticles' |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talk presented on Magnetism and Magnetic Materials, Pittsburgh, USA, November 2017 |
Year(s) Of Engagement Activity | 2017 |
Description | 'Structural and spectroscopic characterisation of heterostructures for semiconductor spintronics applications |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | This talk was presented on the International Microscopy Conference, Sydney, Australia, September 2018 |
Year(s) Of Engagement Activity | 2018 |
Description | 'The Role of Antiphase Boundaries on Magnetic Domains Formation in Fe3O4 Thin Films', talk for MMM |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | This talk was presented on Magnetism and Magnetic Materials, Pittsburgh, USA, November 2017 |
Year(s) Of Engagement Activity | 2017 |
Description | Co2FeSiAl/Si(111) heterointerface: magnetic and atomic structure' talk presented on international conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | This work was presented on Magnetism and Magnetic Materials, San Diego, USA, January 2016 |
Year(s) Of Engagement Activity | 2016 |