Development of HV-CMOS sensor technology for future tracking applications

Lead Research Organisation: University of Liverpool
Department Name: Physics

Abstract

Integrated technologies will be employed more and more beyond the extremely high performance tracking applications that target the region nearest to the interaction point in collider physics experiments. The UK holds a strong leadership in the development and construction of intermediate and large area silicon strip detectors, with expertise ranging from sensor development and integrated circuit design to the engineering of complete detector systems. Investment in future technologies is essential to maintain this leadership. HV-CMOS is a very strong candidate to become one of the main technologies for high precision particle detection, because of its potential wide commercial availability, its cost effectiveness and its expected layout flexibility. Our proposal focuses on demonstrating these advantages and would be an important step to develop the ability in the UK to design custom detectors. This would be a key element in developing UK leadership in the application of this technology.

Planned Impact

The proposal will help built UK leadership in a technology area that is likely to dominate high granularity particle detection technologies in the future.

Development and production costs for charged particle detectors are expected to come down with the use of the proposed technology.

STFC will benefit from the increased choice of technologies and expected cost reductions.

The low development cost the detector concept targeted in the proposal will open up new possibilities for the applications of particle detection technologies outside scientific research. Position sensitive particle detectors have a wide range of applications in areas including medicine, home-land security, container monitoring in ports and at borders, non-proliferation, etc.

Publications

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Description On this project we have produced prototype pixel sensors with both hybrid and fully monolithic pixel arrays in AMS 350nm High Voltage CMOS technology node, the AMS 180nm High Voltage CMOS technology node and the LFoundry 150nm High Voltage CMOS technology node.
Exploitation Route HV-MAPS sensrs have already become the chosen technology for the Mu3e experiment at PSI and is a serious contender technology for ATLAS pixel sensors for the high luminosity LHC upgrade. In general we expected these sensoers to become one of the technologies of choise for future paticle tracking applications that need good position resolution, high speed readout and good radiation tolerance. There is now a wide international effort on this tecjhnology and our grant helped substantailly to allow the UK to contribute to this. Our efoorts continue through the development fo HV_MAPS sensors for Mu3e, ATLAS and other future experinments and, on a more generic level, thorugh the CERN RD50 collaboration.
Sectors Aerospace, Defence and Marine,Agriculture, Food and Drink,Chemicals,Electronics,Environment,Healthcare,Pharmaceuticals and Medical Biotechnology,Security and Diplomacy

 
Description HV-CMOS collaboration 
Organisation Brookhaven National Laboratory
Country United States 
Sector Public 
PI Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Collaborator Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Impact First prototype pixel sensors in AMS 350 nm HV-CMOS technology
Start Year 2014
 
Description HV-CMOS collaboration 
Organisation Heidelberg University
Country Germany 
Sector Academic/University 
PI Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Collaborator Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Impact First prototype pixel sensors in AMS 350 nm HV-CMOS technology
Start Year 2014
 
Description HV-CMOS collaboration 
Organisation IFIC Barcelona
Country Spain 
Sector Private 
PI Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Collaborator Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Impact First prototype pixel sensors in AMS 350 nm HV-CMOS technology
Start Year 2014
 
Description HV-CMOS collaboration 
Organisation Karlsruhe Institute of Technology
Country Germany 
Sector Academic/University 
PI Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Collaborator Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Impact First prototype pixel sensors in AMS 350 nm HV-CMOS technology
Start Year 2014
 
Description HV-CMOS collaboration 
Organisation University of Bern
Department Institute for Surgical Technology and Biomechanics
Country Switzerland 
Sector Academic/University 
PI Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Collaborator Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Impact First prototype pixel sensors in AMS 350 nm HV-CMOS technology
Start Year 2014
 
Description HV-CMOS collaboration 
Organisation University of Geneva
Department Physics Section
Country Switzerland 
Sector Academic/University 
PI Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Collaborator Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Impact First prototype pixel sensors in AMS 350 nm HV-CMOS technology
Start Year 2014
 
Description HV-CMOS collaboration 
Organisation University of Tsukuba
Country Japan 
Sector Academic/University 
PI Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Collaborator Contribution Design, cost sharing for submissions and evaluation of prototype HV-CMOS devices
Impact First prototype pixel sensors in AMS 350 nm HV-CMOS technology
Start Year 2014
 
Title Engineering run submission to AMS in H18 CMOS process 
Description Co-design of submission including ATLAS pixel devices and MuPix8 Matrix. 
Type Of Technology Detection Devices 
Year Produced 2016 
Impact Device not yet back from manufacturer. Evaluation still to come. 
 
Title H35DEMO: Engineering run submission to AMS in h35 process 
Description Prototype pixel sensors with both hybrid and fully monolithic pixel arrays in AMS 350nm High Voltage CMOS technology node 
Type Of Technology Detection Devices 
Year Produced 2015 
Impact Testing of the novel devices and further development of the technology will take place in 2016. 
 
Title Lfoundry MPW submission in their 150 nm HV-CMOS process. 
Description Co-design of MPW submission including ATLAS and mu3e test devices 
Type Of Technology Detection Devices 
Year Produced 2016 
Impact Evaluation is ongoing. 
 
Title Lfoundry MPW submission of small pixel prototype 
Description Prototype to demonstrate 50x50 micorn pixel matrix with high level of in-pixel electronics. 
Type Of Technology Detection Devices 
Year Produced 2016 
Impact Device will be received back from manufacturer in early 2017. Evalulation still to come.