Compound Semiconductor Waveguides for Integrated Photonics

Lead Research Organisation: Cardiff University
Department Name: School of Physics and Astronomy


The leading integrated photonics platforms are based on silicon-on-insulator and silicon-oxynitride, but both these materials are "passive" without a direct optical bandgap, and with significant non-linear losses (two photon absorption) in the 1550nm telecommunications band. Switching integrated photonics solutions to a compound semiconductors platform, such as GaN or GaP, would eliminate these problems whilst allowing direct integration of sources, detectors and fast switches on chip. The project will develop the etch processing of these materials to minimise losses, whilst comparing their performance with SOI integrated photonic devices from Newport Wafer Fab. The project will begin by simulating GaN waveguides for use in photonic integrated circuits. A non-invasive optical characterisation system for test structures on integrated photonic wafers will then be developed. GaN integrated photonics devices fabricated in the Institute for Compound Semiconductors Cleanroom will be measured, and bench-marked against silicon-based devices from NWF.



Cobi Maynard (Student)


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Studentship Projects

Project Reference Relationship Related To Start End Student Name
EP/S024441/1 01/07/2019 31/12/2027
2265738 Studentship EP/S024441/1 01/10/2019 30/09/2023 Cobi Maynard