GLOBAL-Promoting Research Partnership in Fabrication of Advanced III-nitride Optoelectronics With Ultra Energy Efficiency Using Nanotechnology
Lead Research Organisation:
University of Sheffield
Department Name: Electronic and Electrical Engineering
Abstract
Our research has the potential to meet two major challenges which human beings are facing: energy crisis and climate change. Currently, the energy consumed due to general illumination accounts for 29% of the world's total energy consumption. Although the energy provided by an hour of solar radiation on the Earth is equivalent to the world's total energy consumption per year, solar cells contribute only 0.03% to the figure. Therefore, it is necessary to develop new technologies to achieve ultra energy-efficient solid-state lighting sources and solar cells. The appearance of III-nitride semiconductors provides human beings with such a unique opportunity, as the light emission from III-nitrides covers the complete visible spectrum and also a major part of the solar spectrum. It has been predicted that III-nitride LEDs if used in our homes and offices could save 15% of the electricity generated at power stations, 15% of the fuel used, and 15% reduction in carbon emission.
For more than a decade substantial efforts have been devoted to developing high-brightness III-nitride LEDs (HB-LEDs) worldwide. Consequently, major achievements have been made. However, a fatal problem has appeared, and has to be solved urgently. That is the well-known "efficiency droop": the efficiency of HB-LEDs shows the highest value only at a low injection current, and a further increase in injection current leads to a significant reduction in efficiency. This is the "efficiency droop". Under the injection current required for practical applications, the efficiency drops down to >50% of the peak value, meaning that a large amount of energy has been wasted. This also causes a severe reliability issue, as the wasted energy leads to an elevated temperature of the devices and thus severe degradation in device performance. The physical origins of the efficiency droop are very complicated and thus unclear. So far, there is not any efficient solution.
In the project, the scientists from 6 world-leading teams at University of Sheffield, Yale University (USA), Nanjing University (China) and Technology University of Braunschweig (Germany) are pooling their unique but complementary expertise, proposing to employ a number of advanced nanotechnologies and epitaxial growth techniques in order to explore the fundamental issue, and then achieve ultra energy-efficient LEDs.
For solar cells, it has been predicted that an energy-conversion efficiency of >50% can be achieved with III-nitrides, which is much higher than that of any current solar cell. The solar energy-conversion efficiency of current III-nitride solar cells is extremely low, only ~3% in the best report due to a number of technologic challenges. We will combine our complementary expertise from 6 teams to tackle the challenges by employing a similar nanotechnology to fabricate into nanorod array solar cells on the epiwafers with a thick super-lattice structure on the GaN substrates with ultra-high crystal quality.
For more than a decade substantial efforts have been devoted to developing high-brightness III-nitride LEDs (HB-LEDs) worldwide. Consequently, major achievements have been made. However, a fatal problem has appeared, and has to be solved urgently. That is the well-known "efficiency droop": the efficiency of HB-LEDs shows the highest value only at a low injection current, and a further increase in injection current leads to a significant reduction in efficiency. This is the "efficiency droop". Under the injection current required for practical applications, the efficiency drops down to >50% of the peak value, meaning that a large amount of energy has been wasted. This also causes a severe reliability issue, as the wasted energy leads to an elevated temperature of the devices and thus severe degradation in device performance. The physical origins of the efficiency droop are very complicated and thus unclear. So far, there is not any efficient solution.
In the project, the scientists from 6 world-leading teams at University of Sheffield, Yale University (USA), Nanjing University (China) and Technology University of Braunschweig (Germany) are pooling their unique but complementary expertise, proposing to employ a number of advanced nanotechnologies and epitaxial growth techniques in order to explore the fundamental issue, and then achieve ultra energy-efficient LEDs.
For solar cells, it has been predicted that an energy-conversion efficiency of >50% can be achieved with III-nitrides, which is much higher than that of any current solar cell. The solar energy-conversion efficiency of current III-nitride solar cells is extremely low, only ~3% in the best report due to a number of technologic challenges. We will combine our complementary expertise from 6 teams to tackle the challenges by employing a similar nanotechnology to fabricate into nanorod array solar cells on the epiwafers with a thick super-lattice structure on the GaN substrates with ultra-high crystal quality.
Planned Impact
III-nitride optoelectronics have had a major impact in a number of technologically important areas, in particular, energy conservation and clean & sustainable energy. Given concerns with the sustainability of energy supplies and carbon emission, the ability to fabricate ultra energy-efficient solid-state lighting sources and solar cells is a major driver of this research field. Estimated global sales of $4.5 billion are predicted by 2012, with a further rapid increase expected as improved efficiencies produce further advantages compared to more traditional light sources. In addition to replacing 'standard' light sources, III-nitride LEDs are finding application in more specialist areas, for example, backlighting for LCD displays.
The results of our research will have economic impact in a number of fields. Most important will be the development of improved efficiency solar cell and blue emitters with application in lighting and display technology. These will be of benefit to a number of UK companies, for example IQE (Cardiff), Enfis (Swansea), Forge Europa Ltd (Cumbria), Zeta-control (Oxford), and the Sheffield spin-out company Seren Photonics Ltd, etc. The benefits to Seren Photonics include the enhancement of their product range, allowing them to maintain competitiveness against other international companies, particularly in Japan and US.
We also have strong links with other UK companies involved in the application of III-nitrides or the development of related equipment (e.g. Thomas Swann) and the UK semiconductor/laser community via the UK Nitride Consortium and also the EPSRC National Centre for III-V Technologies. The results of our work will be communicated via regular open scientific meetings including the biannual Nitride Consortium meetings of which the Sheffield team is an active member.
The project offers an excellent training opportunity for PhD students and PDRAs, both in terms of technical training, development of research skills, etc. The training provided for PhD students and PDRAs will also have a direct economic impact via the provision of skilled workers who may subsequently be employed by relevant companies. This has been a career destination of staff previously employed/trained on our related projects and has contributed to the pool of staff trained in device fabrication, epitaxial growth, characterisation, etc., a critical requirement in maintaining the competitive edge of UK companies.
Indeed, the impact of the project would even reach to the nation's health, as the ultra energy- efficient LEDs offers the excellent ability to tune the colour temperature according to the needs of the user, which is extremely important for household/workplace lighting. There is growing evidence that light quality in terms of colour temperature can have a strong psychological impact.
The international collaboration leads to possibilities for attracting the investments from overseas, in particular, the emerging countries such as China. This can potentially boost the local economy.
The project will potentially make a great contribution to building a very clean, sustainable and energy-consumption-efficient world in the next 10-50 years.
The results of our research will have economic impact in a number of fields. Most important will be the development of improved efficiency solar cell and blue emitters with application in lighting and display technology. These will be of benefit to a number of UK companies, for example IQE (Cardiff), Enfis (Swansea), Forge Europa Ltd (Cumbria), Zeta-control (Oxford), and the Sheffield spin-out company Seren Photonics Ltd, etc. The benefits to Seren Photonics include the enhancement of their product range, allowing them to maintain competitiveness against other international companies, particularly in Japan and US.
We also have strong links with other UK companies involved in the application of III-nitrides or the development of related equipment (e.g. Thomas Swann) and the UK semiconductor/laser community via the UK Nitride Consortium and also the EPSRC National Centre for III-V Technologies. The results of our work will be communicated via regular open scientific meetings including the biannual Nitride Consortium meetings of which the Sheffield team is an active member.
The project offers an excellent training opportunity for PhD students and PDRAs, both in terms of technical training, development of research skills, etc. The training provided for PhD students and PDRAs will also have a direct economic impact via the provision of skilled workers who may subsequently be employed by relevant companies. This has been a career destination of staff previously employed/trained on our related projects and has contributed to the pool of staff trained in device fabrication, epitaxial growth, characterisation, etc., a critical requirement in maintaining the competitive edge of UK companies.
Indeed, the impact of the project would even reach to the nation's health, as the ultra energy- efficient LEDs offers the excellent ability to tune the colour temperature according to the needs of the user, which is extremely important for household/workplace lighting. There is growing evidence that light quality in terms of colour temperature can have a strong psychological impact.
The international collaboration leads to possibilities for attracting the investments from overseas, in particular, the emerging countries such as China. This can potentially boost the local economy.
The project will potentially make a great contribution to building a very clean, sustainable and energy-consumption-efficient world in the next 10-50 years.
Publications
![publication icon](/resources/img/placeholder-60x60.png)
Amari H
(2012)
Characterization of InGaN/GaN epitaxial layers by aberration corrected TEM/STEM
in physica status solidi c
![publication icon](/resources/img/placeholder-60x60.png)
Amari H
(2012)
Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEM
in Journal of Physics: Conference Series
![publication icon](/resources/img/placeholder-60x60.png)
![publication icon](/resources/img/placeholder-60x60.png)
Bai J
(2016)
Effect of an ITO current spreading layer on the performance of InGaN MQW solar cells
in physica status solidi c
![publication icon](/resources/img/placeholder-60x60.png)
Bai J
(2014)
Efficiency enhancement of InGaN/GaN solar cells with nanostructures
in Applied Physics Letters
![publication icon](/resources/img/placeholder-60x60.png)
Bai J
(2013)
Efficient reduction of defects in (11 2 0) non-polar and (11 2 2) semi-polar GaN grown on nanorod templates
in Applied Physics Letters
![publication icon](/resources/img/placeholder-60x60.png)
Hou Y
(2016)
Enhanced water splitting with silver decorated GaN photoelectrode
in Journal of Physics D: Applied Physics
![publication icon](/resources/img/placeholder-60x60.png)
Benton J
(2013)
Enhancement in solar hydrogen generation efficiency using a GaN-based nanorod structure
in Applied Physics Letters
![publication icon](/resources/img/placeholder-60x60.png)
Hou Y
(2016)
GaN nano-pyramid arrays as an efficient photoelectrode for solar water splitting.
in Nanotechnology
![publication icon](/resources/img/placeholder-60x60.png)
Wang T
(2017)
Handbook of Solid-State Lighting and LEDs
![publication icon](/resources/img/placeholder-60x60.png)
Li Q
(2018)
Heavily tin-doped indium oxide nano-pyramids as high-performance gas sensor
in AIP Advances
![publication icon](/resources/img/placeholder-60x60.png)
Xing K
(2013)
Improved Crystal Quality of (112¯2) Semi-Polar GaN Grown on A Nanorod Template
in Japanese Journal of Applied Physics
![publication icon](/resources/img/placeholder-60x60.png)
Tang H
(2015)
Influence of piezoelectric fields on InGaN based intermediate band solar cells
in Journal of Physics D: Applied Physics
![publication icon](/resources/img/placeholder-60x60.png)
Zhang Y
(2016)
Influence of strain on emission from GaN-on-Si microdisks
in Journal of Physics D: Applied Physics
![publication icon](/resources/img/placeholder-60x60.png)
Bai J
(2016)
Influence of the ITO current spreading layer on efficiencies of InGaN-based solar cells
in Solar Energy Materials and Solar Cells
![publication icon](/resources/img/placeholder-60x60.png)
Li Q
(2018)
Investigation of growth parameters influence on self-catalyzed ITO nanowires by high RF-power sputtering.
in Nanotechnology
![publication icon](/resources/img/placeholder-60x60.png)
Walther T
(2012)
Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision
in Journal of Materials Science
![publication icon](/resources/img/placeholder-60x60.png)
Hou Y
(2017)
Porosity-enhanced solar powered hydrogen generation in GaN photoelectrodes
in Applied Physics Letters
![publication icon](/resources/img/placeholder-60x60.png)
Southern-Holland R
(2016)
Power density dependent photoluminescence spectroscopy and Raman mapping of semi-polar and polar InGaN/GaN multiple quantum well samples
in physica status solidi c
![publication icon](/resources/img/placeholder-60x60.png)
Bai J
(2018)
Semi-polar InGaN/GaN multiple quantum well solar cells with spectral response at up to 560 nm
in Solar Energy Materials and Solar Cells
![publication icon](/resources/img/placeholder-60x60.png)
Benton J
(2014)
Utilisation of GaN and InGaN/GaN with nanoporous structures for water splitting
in Applied Physics Letters
Description | Demonstrate 1st blue nanorod array LEDs for practical applications in terms of optical performance and electrical performance Demonstrate significantly improved InGaN-based solar cells Understanding of mechanism for enhanced optical performance of nanorod array LEDs Development of novel semipolar GaN overgrowth techniques understanding the mechanism of defect reduction of semipolar GaN overgrowth Demonstration of high energy conversion efficient photoelectrodes for solar hydrogen generation |
Exploitation Route | joint publication and joint grant applications and technology transfer and international collaboration |
Sectors | Digital/Communication/Information Technologies (including Software),Education,Electronics,Energy,Environment,Healthcare |
Description | III-nitride optoelectronics have had a major impact in a number of technologically important areas, in particular, energy conservation and clean & sustainable energy. Given concerns with the sustainability of energy supplies and carbon emission, the ability to fabricate ultra energy-efficient solid-state lighting sources and solar cells is a major driver of this research field. Estimated global sales of $4.5 billion are predicted by 2012, with a further rapid increase expected as improved efficiencies produce further advantages compared to more traditional light sources. In addition to replacing 'standard' light sources, III-nitride LEDs are finding application in more specialist areas, for example, backlighting for LCD displays. The results of our research have economic impact in a number of fields. Most important is the development of improved efficiency solar cell and blue emitters with application in lighting and display technology. These will be of benefit to a number of UK companies, for example IQE (Cardiff), Enfis (Swansea), Forge Europa Ltd (Cumbria), Zeta-control (Oxford), and the Sheffield spin-out company Seren Photonics Ltd, etc. The benefits to Seren Photonics include the enhancement of their product range, allowing them to maintain competitiveness against other international companies, particularly in Japan and US. We also have strong links with other UK companies involved in the application of III-nitrides or the development of related equipment (e.g. Thomas Swann) and the UK semiconductor/laser community via the UK Nitride Consortium and also the EPSRC National Centre for III-V Technologies. The results of our work will be communicated via regular open scientific meetings including the biannual Nitride Consortium meetings of which the Sheffield team is an active member. The project offers an excellent training opportunity for PhD students and PDRAs, both in terms of technical training, development of research skills, etc. The training provided for PhD students and PDRAs have a direct economic impact via the provision of skilled workers who may subsequently be employed by relevant companies. This has been a career destination of staff previously employed/trained on our related projects and has contributed to the pool of staff trained in device fabrication, epitaxial growth, characterisation, etc., a critical requirement in maintaining the competitive edge of UK companies. Indeed, the impact of the project would even reach to the nation's health, as the ultra energy- efficient LEDs offers the excellent ability to tune the colour temperature according to the needs of the user, which is extremely important for household/workplace lighting. There is growing evidence that light quality in terms of colour temperature can have a strong psychological impact. The international collaboration leads to possibilities for attracting the investments from overseas, in particular, the emerging countries such as China. This can potentially boost the local economy. |
Sector | Electronics,Energy |
Impact Types | Economic |
Description | A Joint research centre for III-nitride materials and devices has been established between University of Sheffield and Nanjing University |
Organisation | Nanjing University (NJU) |
Country | China |
Sector | Academic/University |
PI Contribution | A joint research centre for III-nitrides was established between University of Sheffield and Nanjing University was signed in May 2012; The VC, PVC, and University Registrar and Secretary from UoS and the President, Executive Vice-president from Nanjing University attended the MOU signing ceremony. An officially opening ceremony was held in July 2013, where a senior delegation from Nanjing University and the VC, PVCs from the University of Sheffield attended. The joint centre will combine our complementary expertise, aiming at a truly internationally leading research centre on III-nitrides. It will also widely benefit the other research areas in the EEE department and other departments in Sheffield. We have published a number of joint papers on high profile journals, based on the facilities and samples provided here in Sheffield |
Collaborator Contribution | The Nanjing University has sent Ph.D student and PDRA to Sheffield, and they also provided some specific nano-particles for our development of nanofabrication expertise here in Sheffield |
Impact | A number of joint publications; A jointly organised summer school, and workshop planned; A number of joint grant applications ongoing |
Start Year | 2012 |
Description | A MOU was signed between the Unversity of Sheffield and Universiti Sains Malaysia in order to initiate A Networking On Nitrides Semiconductor Optoelectronics And Electronics |
Organisation | University of Science Malaysia |
Country | Malaysia |
Sector | Academic/University |
PI Contribution | The Sheffield GaN center led by Professor Tao Wang has established an internationally recognized reputation in the field of III-nitride opto-electronics, ranging from epitaxial growth, through material characterization to device fabrication. |
Collaborator Contribution | The team at Universiti Sains Malaysia has good experience in technology commercializing. Therefore, both team aims at enhancing academic exchange and cooperation in this field |
Impact | The MOU was just signed several weeks ago. Hopefully, we will have results soon |
Start Year | 2019 |
Description | A long term collaboration between Sheffield and Nanjing in the field of III-nitride Optoelectronics |
Organisation | Nanjing University (NJU) |
Country | China |
Sector | Academic/University |
PI Contribution | Nanjing University covers the major travel cost (domestic part) for the Sheffield team's visit to Nanjing, and the consumables costs for joint research activities at Nanjing |
Collaborator Contribution | The University of Sheffield covers the major travel cost (domestic part) for the Nanjing team's visit to Nanjing, and the consumables costs for joint research activities at Sheffield |
Impact | Professor Wang co-organised 1st Sheffield-Nanjing workshop held at Sheffield on 9-11 Feb 2015: 5 members from Nanjing University joined, 10 members from Sheffield, two external members from Strathclyde and Nottingham joined Professor Wang co-organised 2nd Sheffield-Nanjing workshop held at Nanjing on 13-17 December 2015 4 members from Sheffield, 12 members from Nanjing University As a Co-I, Professor Wang supported the Najing team's NSFC international programme grant application (led by Professor Lu, Hai) in both 2015 and 2016 As a co-organiser and one distinguished lecturer, Professor Wang delivered a lecturer at an international workshop on III-nitrides, held in Weihai, China, 27-30 August 2015 Professor Wang co-supervise a Ph.D student from Nanjing (Mr Zhuang, Zhe) Professor Wang and the Nanjing team is preparing a jointly grant application via the Innovate UK-China bridge programme in 2016: UK partners: University of Sheffield, Seren Photonics Ltd, Strathclyde China partners: Nanjing University; Nanjing Nanda optoelectronics Ltd |
Start Year | 2013 |
Description | TW: 2017 industrial event/open day |
Form Of Engagement Activity | A formal working group, expert panel or dialogue |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Professional Practitioners |
Results and Impact | The event has attracted more than 10 CEOs from the UK industrial companies. All the new technological breakthroughs developed through the projects have been presented. It is expected that it will make major impact on industry. |
Year(s) Of Engagement Activity | 2017 |
Description | TW: 2019 Industrial open day |
Form Of Engagement Activity | A formal working group, expert panel or dialogue |
Part Of Official Scheme? | No |
Geographic Reach | National |
Primary Audience | Industry/Business |
Results and Impact | It aims to establish new collaboration with industry and further strengthen existing collaboration with industry, and to support the UK advanced manufacturing. |
Year(s) Of Engagement Activity | 2019 |