Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.

Lead Research Organisation: Imperial College London
Department Name: Materials

Abstract

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Publications

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Hirsch P (2013) The dissociation of the [ a + c ] dislocation in GaN in Philosophical Magazine

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Horton MK (2015) Segregation of In to dislocations in InGaN. in Nano letters

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Naresh-Kumar G (2014) Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN. in Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada

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Rhode S (2014) Structure and strain relaxation effects of defects in In x Ga1- x N epilayers in Journal of Applied Physics

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Rhode S (2015) Dislocation core structures in Si-doped GaN in Applied Physics Letters

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Rhode S (2016) Dislocation core structures in (0001) InGaN in Journal of Applied Physics

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Rhode SK (2013) Mg doping affects dislocation core structures in GaN. in Physical review letters

 
Description We have conducted extensive studies of the interactions between linear crystalline defects called 'dislocations', and technologically important impurity 'dopant' atoms in the Group III-nitride semiconductors. We have discovered that impurity atoms can affect the electronic properties of the dislocations. This is an important finding that can be used to improve the efficiencies of light emitting diodes based on III-nitride semiconductors, which are used in solid-state lighting.
Exploitation Route Our findings will inform the design of improved light-emitting diodes with much greater efficiencies, for use in energy-efficient solid-state lighting. They may also be used to help engineer the properties of the dislocations so that they become electrically inactive. This would make solid-state lighting much cheaper to produce.
Sectors Electronics,Energy