Nanoscale characterisation of nitride semiconductor thin films using EBSD, ECCI, CL and EBIC.
Lead Research Organisation:
Imperial College London
Department Name: Materials
Abstract
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Organisations
People |
ORCID iD |
Michelle Moram (Principal Investigator) |
Publications
Rhode S
(2015)
Dislocation core structures in Si-doped GaN
in Applied Physics Letters
Rhode S
(2014)
Structure and strain relaxation effects of defects in In x Ga1- x N epilayers
in Journal of Applied Physics
Rhode S
(2016)
Dislocation core structures in (0001) InGaN
in Journal of Applied Physics
Naresh-Kumar G
(2014)
Coincident electron channeling and cathodoluminescence studies of threading dislocations in GaN.
in Microscopy and microanalysis : the official journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
Horton MK
(2015)
Segregation of In to dislocations in InGaN.
in Nano letters
Hirsch P
(2013)
The dissociation of the [ a + c ] dislocation in GaN
in Philosophical Magazine
Rhode SK
(2013)
Mg doping affects dislocation core structures in GaN.
in Physical review letters
Description | We have conducted extensive studies of the interactions between linear crystalline defects called 'dislocations', and technologically important impurity 'dopant' atoms in the Group III-nitride semiconductors. We have discovered that impurity atoms can affect the electronic properties of the dislocations. This is an important finding that can be used to improve the efficiencies of light emitting diodes based on III-nitride semiconductors, which are used in solid-state lighting. |
Exploitation Route | Our findings will inform the design of improved light-emitting diodes with much greater efficiencies, for use in energy-efficient solid-state lighting. They may also be used to help engineer the properties of the dislocations so that they become electrically inactive. This would make solid-state lighting much cheaper to produce. |
Sectors | Electronics,Energy |