Ultra short gate length diamond FETs for high power/high frequency applications

Lead Research Organisation: University of Glasgow
Department Name: Electronics and Electrical Engineering

Abstract

Recent advances in the growth and processing of electronic diamond have provided a glimpse into the potential device performance and applications that this exciting material system can provide. Unique and highly desirable material properties such as large bandgap, high intrinsic mobility and very high thermal conductivity deem diamond the ultimate material for high power/high frequency device realisation. This combined with ultra small feature processing potential, points towards an ultra short gate length FET technology as the obvious choice for the application of such a unique material system. For this work it is proposed that 10nm T-gate diamond FETs be investigated leading to a device technology that can satisfy the expanding demand for high power / high frequency operation. In particular this technology finds application in increasing the source power of Terahertz imaging systems, which currently are of great interest for security and medical imaging applications. This prime goal of the proposed research is accomplishable using high quality diamond material supplied by U.K. based company Element 6 and use of the extensive fabrication and characterisation facilities at the University of Glasgow. In particular, access to the ultra-high resolution capabilities of the recently commissioned Vistek VB6 electron beam lithography tool, provides a direct route to the realisation of such ultra-small dimension devices.

Publications

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Russell S (2013) Surface transfer doping of diamond by MoO 3 : A combined spectroscopic and Hall measurement study in Applied Physics Letters

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Crawford K (2016) Enhanced surface transfer doping of diamond by V2O5 with improved thermal stability in Applied Physics Letters

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Cappelluti F (2015) Investigating the properties of interfacial layers in planar Schottky contacts on hydrogen-terminated diamond through direct current/small-signal characterization and radial line small-signal modelling in Applied Physics Letters

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Greer A (2012) Charge dissipation layer optimisation for nano-scale electron-beam lithography pattern definition onto diamond in Diamond and Related Materials

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Crawford K (2018) The role of hydrogen plasma power on surface roughness and carrier transport in transfer-doped H-diamond in Diamond and Related Materials

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Moran D (2011) Scaling of Hydrogen-Terminated Diamond FETs to Sub-100-nm Gate Dimensions in IEEE Electron Device Letters

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Russell S (2012) Hydrogen-Terminated Diamond Field-Effect Transistors With Cutoff Frequency of 53 GHz in IEEE Electron Device Letters

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Macdonald D (2018) Performance Enhancement of Al 2 O 3 /H-Diamond MOSFETs Utilizing Vacuum Annealing and V 2 O 5 as a Surface Electron Acceptor in IEEE Electron Device Letters

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Russell S (2015) RF Operation of Hydrogen-Terminated Diamond Field Effect Transistors: A Comparative Study in IEEE Transactions on Electron Devices

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Moran D (2011) Processing of 50 nm gate-length hydrogen terminated diamond FETs for high frequency and high power applications in Microelectronic Engineering

 
Description The ability to increase the high frequency performance and greater understanding of the operation of diamond transistor technology was established through this project.
Exploitation Route This work demonstrates the intrinsic high frequency potential of hydrogen-terminated diamond transistor technology which will aid future end-users to identify suitable RF applications.
Sectors Aerospace, Defence and Marine,Electronics,Energy
URL http://ieeexplore.ieee.org/stamp/stamp.jsp?arnumber=6291745