ECCS - EPSRC Development of uniform, low power, high density resistive memory by vertical interface and defect design
Lead Research Organisation:
University of Cambridge
Department Name: Materials Science & Metallurgy
Abstract
The future of energy-efficient computing will increasingly move from being compute-centric to being memory-centric. There is a huge-energy cost of storing and moving data, which is much higher than computing it. Indeed, memory dominates compute energy (>4X) in data-intensive applications. New ultralow power non-volatile memory (NVM) is central to all aspects of computing, from stand-alone, storage class memory (SCM) for use in data centres, to embedded non-volatile memory (e-NVM) for IoT, the automotive industry, etc, to new forms of computing. The area is growing hugely, along with the associated energy consumption, e.g. data centers will use >10% of global electricity by 2030 with a market growing ~10% per year, to >$150 billion by 2023. Such efficiency cannot come from processing as Moore's law reaches an end and new processor technologies are not yet established. The biggest performance and energy saving gains will be in memory. The replacement of standard memory with high performance memory NVM could reduce power usage by more than 60%.
Of the many candidate NVM forms under intense investigation, oxide resistive RAM (RRAM) has the greatest potential in terms of cost, density, simplicity and potential for 3D integration. However, several challenges currently exist, notably the need for a forming voltage, poor uniformity, scaling, and endurance. The aim of this project is to overcome these challenges. It will be done by adopting our ground-breaking results from an ideal system to an industry platform. So far, in the ideal system, we have demonstrated that a) precise and non-random conducting channels can be engineered into films to eliminate the need for a high voltage forming process; b) high and controlled oxygen vacancy concentrations lead to highly and reproducible on-off ratios; c) eliminating use of transition metals produces low leakage and strongly reduces variabilities from film to film. The industry platform we will explore in this project is doped HfO2, grown by sputtering and atomic layer deposition.
An internationally leading team with more than 15 years of very strong collaboration in the area of the proposal will undertake the work. First, growth of VAN films using pulsed laser deposition (PLD) will be undertaken at Purdue University. PLD is the simplest way to make the most perfect metal oxide films in a rapid way. These will enable us to understand the RS processes more fully and will provide information on how to grow the films by the industrially scaleable processes. Both Purdue and Cambridge will be involved in the HfO2 nanostructure film design for PLD. The knowledge from the PLD growth will then be translated to the sputtering and ALD approaches undertaken at the University of Cambridge. The effort at the University at Buffalo will focus on the fabrication and testing of prototype memristors and RRAMs using the RS films deposited by Purdue University and University of Cambridge. State-of-the art (some in-operando) characterisation tools will also be central to materials understanding and device optimisation and these will be used at Purdue and Cambridge. A very strong interaction between the groups, with regular sample and knowledge transfer will take place. Our ultimate goal is a forming free device, with on/off ratio~104, endurance >1012, <10pJ per switch, uniformity of few %, scaled to 20 nm.
In terms of training, we will educate graduates in materials sciences and electronic engineering. We will train more than 3 early career researchers in world-leading research environments in the US and UK, with several companies involved (small to large), including the Cambridge company ARM who are very active, both in the UK and US, in the memory area.
Of the many candidate NVM forms under intense investigation, oxide resistive RAM (RRAM) has the greatest potential in terms of cost, density, simplicity and potential for 3D integration. However, several challenges currently exist, notably the need for a forming voltage, poor uniformity, scaling, and endurance. The aim of this project is to overcome these challenges. It will be done by adopting our ground-breaking results from an ideal system to an industry platform. So far, in the ideal system, we have demonstrated that a) precise and non-random conducting channels can be engineered into films to eliminate the need for a high voltage forming process; b) high and controlled oxygen vacancy concentrations lead to highly and reproducible on-off ratios; c) eliminating use of transition metals produces low leakage and strongly reduces variabilities from film to film. The industry platform we will explore in this project is doped HfO2, grown by sputtering and atomic layer deposition.
An internationally leading team with more than 15 years of very strong collaboration in the area of the proposal will undertake the work. First, growth of VAN films using pulsed laser deposition (PLD) will be undertaken at Purdue University. PLD is the simplest way to make the most perfect metal oxide films in a rapid way. These will enable us to understand the RS processes more fully and will provide information on how to grow the films by the industrially scaleable processes. Both Purdue and Cambridge will be involved in the HfO2 nanostructure film design for PLD. The knowledge from the PLD growth will then be translated to the sputtering and ALD approaches undertaken at the University of Cambridge. The effort at the University at Buffalo will focus on the fabrication and testing of prototype memristors and RRAMs using the RS films deposited by Purdue University and University of Cambridge. State-of-the art (some in-operando) characterisation tools will also be central to materials understanding and device optimisation and these will be used at Purdue and Cambridge. A very strong interaction between the groups, with regular sample and knowledge transfer will take place. Our ultimate goal is a forming free device, with on/off ratio~104, endurance >1012, <10pJ per switch, uniformity of few %, scaled to 20 nm.
In terms of training, we will educate graduates in materials sciences and electronic engineering. We will train more than 3 early career researchers in world-leading research environments in the US and UK, with several companies involved (small to large), including the Cambridge company ARM who are very active, both in the UK and US, in the memory area.
Planned Impact
New high performance NVM is critical to many technology sectors, i.e. in transport, medicine, communications, and IoT. The total market for all these areas is huge, i.e. $ Trillions. Industry adoption of high performance advanced NVM memory would have a huge impact on all these technologies. If our proposed solutions for oxide RRAM are successfully translated to an industry platform then we will have achieved a game-changing NVM technology and it will have a huge impact on future technologies. This will lead both to the creation of many new high tech jobs and to an improvement in quality of life by reducing CO2 emissions. Hence, there is the potential for strong societal impact.
In terms of academic impact, the strong global competition for skilled personnel and the increasing international competition in new technologies, particularly in advanced materials, means that training of a number of high quality engineers and scientists is crucial. The broader training we will provide the team in advanced memory technology will feed not just into the academic community but also into high tech industries. Such industries all report difficulties in finding skilled people, including the companies we will collaborate with in this project.
Strong industrial manufacturing bases in high technology areas to enhance the knowledge economy are very important in both the UK and US for high value-added job creation, and these are current priorities of both governments. Indeed, the advanced NVM topic lies at the heart of a number of UKRI priority areas related to both economic impact and improved quality of life: Advanced materials for NVM aligns with the Government's 2017 industrial strategy white paper. The first grand challenge is, 'put the UK at the forefront of the artificial intelligence and data revolution', mentioning ARM's microchips as being a great underpinning technology. NVM technologies are also key to advances in cognitive computing, boosting the development of artificial intelligence. A second UK grand challenge is 'Clean Growth', with 'development, manufacture and use of low carbon technologies'. The need for NVM in electric vehicles and a very wide range of other green technologies, ideally places NVM development under this second challenge area. NVM development aligns also with UKRI priorities under the following themes: 'manufacturing the future', 'the digital economy', and 'ICT'. NVM also fits under the Eight Great Technologies areas of 'Advanced Materials' and 'Big data and energy efficient computing'.
The development of advanced memristors and NVM is also of great interest to the US private sectors and US government, in all the same areas as listed above for UK government priorities. Currently, exascale computing systems have been planned for 2020 through 2022 in US. Other priorities in the US are improving security circuits for the IoT and AI chips, and computer-in-memory for deep neural networks. NVM is a key technology for these areas.
In terms of academic impact, the strong global competition for skilled personnel and the increasing international competition in new technologies, particularly in advanced materials, means that training of a number of high quality engineers and scientists is crucial. The broader training we will provide the team in advanced memory technology will feed not just into the academic community but also into high tech industries. Such industries all report difficulties in finding skilled people, including the companies we will collaborate with in this project.
Strong industrial manufacturing bases in high technology areas to enhance the knowledge economy are very important in both the UK and US for high value-added job creation, and these are current priorities of both governments. Indeed, the advanced NVM topic lies at the heart of a number of UKRI priority areas related to both economic impact and improved quality of life: Advanced materials for NVM aligns with the Government's 2017 industrial strategy white paper. The first grand challenge is, 'put the UK at the forefront of the artificial intelligence and data revolution', mentioning ARM's microchips as being a great underpinning technology. NVM technologies are also key to advances in cognitive computing, boosting the development of artificial intelligence. A second UK grand challenge is 'Clean Growth', with 'development, manufacture and use of low carbon technologies'. The need for NVM in electric vehicles and a very wide range of other green technologies, ideally places NVM development under this second challenge area. NVM development aligns also with UKRI priorities under the following themes: 'manufacturing the future', 'the digital economy', and 'ICT'. NVM also fits under the Eight Great Technologies areas of 'Advanced Materials' and 'Big data and energy efficient computing'.
The development of advanced memristors and NVM is also of great interest to the US private sectors and US government, in all the same areas as listed above for UK government priorities. Currently, exascale computing systems have been planned for 2020 through 2022 in US. Other priorities in the US are improving security circuits for the IoT and AI chips, and computer-in-memory for deep neural networks. NVM is a key technology for these areas.
Organisations
- University of Cambridge (Lead Research Organisation)
- Purdue University (Collaboration, Project Partner)
- University at Buffalo (Collaboration)
- PragmatIC (United Kingdom) (Project Partner)
- University at Buffalo, State University of New York (Project Partner)
- ARM (United Kingdom) (Project Partner)
- Sumitomo Chemical (United Kingdom) (Project Partner)
People |
ORCID iD |
Judith Driscoll (Principal Investigator) |
Publications
Acosta M
(2022)
Surface chemistry and porosity engineering through etching reveal ultrafast oxygen reduction kinetics below 400 °C in B-site exposed (La,Sr)(Co,Fe)O3 thin-films
in Journal of Power Sources
Baiutti F
(2021)
A high-entropy manganite in an ordered nanocomposite for long-term application in solid oxide cells
in Nature Communications
Chen A
(2020)
Couplings of Polarization with Interfacial Deep Trap and Schottky Interface Controlled Ferroelectric Memristive Switching
in Advanced Functional Materials
Di Martino G
(2020)
Real-time in situ optical tracking of oxygen vacancy migration in memristors
in Nature Electronics
Di Martino G
(2020)
Real-time in situ optical tracking of oxygen vacancy migration in memristors
Dou H
(2021)
Electroforming-Free HfO 2 :CeO 2 Vertically Aligned Nanocomposite Memristors with Anisotropic Dielectric Response
in ACS Applied Electronic Materials
Dou H
(2023)
Engineering of Grain Boundaries in CeO 2 Enabling Tailorable Resistive Switching Properties
in Advanced Electronic Materials
Dou H
(2022)
Optical dielectric properties of HfO2-based films
in Journal of Vacuum Science & Technology A
Dou H
(2023)
Self-Assembled Au Nanoelectrodes: Enabling Low-Threshold-Voltage HfO 2 -Based Artificial Neurons
in Nano Letters
Dou H
(2022)
Optical dielectric properties of HfO2-based films
Fu G
(2021)
Facilitating the Deprotonation of OH to O through Fe4+ -Induced States in Perovskite LaNiO3 Enables a Fast Oxygen Evolution Reaction.
in Small (Weinheim an der Bergstrasse, Germany)
Huang J
(2021)
Tailoring physical functionalities of complex oxides by vertically aligned nanocomposite thin-film design
in MRS Bulletin
Jan A
(2023)
In Operando Optical Tracking of Oxygen Vacancy Migration and Phase Change in few Nanometers Ferroelectric HZO Memories
in Advanced Functional Materials
Kunwar S
(2022)
Protons: Critical Species for Resistive Switching in Interface-Type Memristors
in Advanced Electronic Materials
Kunwar S
(2023)
An Interface-Type Memristive Device for Artificial Synapse and Neuromorphic Computing
in Advanced Intelligent Systems
Kunwar S
(2023)
An Interface-Type Memristive Device for Artificial Synapse and Neuromorphic Computing
in Advanced Intelligent Systems
Lee O
(2021)
Ferroelectric/multiferroic self-assembled vertically aligned nanocomposites: Current and future status
in APL Materials
Li W
(2020)
Defects in complex oxide thin films for electronics and energy applications: challenges and opportunities
in Materials Horizons
MacManus-Driscoll J
(2020)
New approaches for achieving more perfect transition metal oxide thin films
MacManus-Driscoll J
(2020)
New approaches for achieving more perfect transition metal oxide thin films
in APL Materials
Nicolenco A
(2021)
Strain-gradient effects in nanoscale-engineered magnetoelectric materials
in APL Materials
Nicolenco A
(2021)
Strain-gradient effects in nanoscale-engineered magnetoelectric materials
Pan H
(2023)
Interplay of polarization, strength, and loss in dielectric films for capacitive energy storage: Current status and future directions
in Journal of Materiomics
Pan H
(2020)
Dielectric films for high performance capacitive energy storage: multiscale engineering.
in Nanoscale
Roy P
(2022)
Role of Defects and Power Dissipation on Ferroelectric Memristive Switching
in Advanced Electronic Materials
Silva J
(2023)
Ferroelectricity and negative piezoelectric coefficient in orthorhombic phase pure ZrO2 thin films
in Applied Materials Today
Silva J
(2022)
Progress and perspective on different strategies to achieve wake-up-free ferroelectric hafnia and zirconia-based thin films
in Applied Materials Today
Sun X
(2020)
Spontaneous Ordering of Oxide-Oxide Epitaxial Vertically Aligned Nanocomposite Thin Films
in Annual Review of Materials Research
Wu R
(2021)
Self-biased magnetoelectric switching at room temperature in three-phase ferroelectric-antiferromagnetic-ferrimagnetic nanocomposites
in Nature Electronics
Yun C
(2021)
High performance, electroforming-free, thin film memristors using ionic Na 0.5 Bi 0.5 TiO 3
in Journal of Materials Chemistry C
Title | Research Data supporting "Comprehensive study of Raman optical response of typical substrates for thin-film growth under 633 nm and 785 nm laser excitation" |
Description | Names of data files correspond to the names of Figures in publication "Comprehensive Study of Raman Optical Response of Typical Substrates for Thin-Film Growth Under 633 nm and 785 nm Laser Excitation" Files: All other files contain .txt data exported from individual graphs in Figures. Please, use any of the following software to plot the data: - OriginLab (https://www.originlab.com/) - Spyder (https://www.spyder-ide.org/) ----------------------- The research project the data originated from: Raman spectroscopy is one of the most efficient and non-destructive techniques for characterising materials. However, it is challenging to analyse thin films using Raman spectroscopy since the substrates beneath the thin film often obscures its optical response. Here, we evaluate the suitability of fourteen commonly employed single-crystal substrates for Raman spectroscopy of thin films using 633 nm and 785 nm laser excitation systems. We determine the optimal wavenumber ranges for thin-film characterization by identifying the most prominent Raman peaks and their relative intensities for each substrate and across substrates. In addition, we compare the intensity of background signals across substrates, which is essential for establishing their applicability for Raman detection in thin films. The substrates LaAlO3 and Al2O3 have the largest free spectral range for both laser systems, while Al2O3 has the lowest background levels, according to our findings. In contrast, the substrates SrTiO3 and Nb:SrTiO3 have the narrowest free spectral range, while GdScO3, NGO and MgO have the highest background levels, making them unsuitable for optical investigations. The dataset usage instructions: Names of data files correspond to the names of Figures whose data they contain. Optical data for Figures 1-3, S1-S5 can be processed using any software for data analysis, such as Spyder (https://www.spyder-ide.org/). All optical data was pre-processed with background subtraction and baseline corrected (multi-polynomial fit of degree 2). The data collection methods: The optical and electrical data (files for Figures 1-3, S1- S5) were collected using self-made setup as described in: Materials and Methods, section 2 and supplementary data. The setup was operated with self-written software in Python 3. All data were collected at the University of Cambridge, Department of Materials Science & Metallurgy. |
Type Of Material | Database/Collection of data |
Year Produced | 2023 |
Provided To Others? | Yes |
URL | https://www.repository.cam.ac.uk/handle/1810/357513 |
Title | Research data supporting "In-operando optical tracking of oxygen vacancy migration and phase change in few-nm ferroelectric HZO memories" |
Description | Data files for the manuscript. Please see the Readme.txt file for a detailed dataset description. |
Type Of Material | Database/Collection of data |
Year Produced | 2023 |
Provided To Others? | Yes |
URL | https://www.repository.cam.ac.uk/handle/1810/348565 |
Title | Research data supporting "Real-Time In-Situ Optical Tracking of Oxygen Vacancy Migration in Memristors" |
Description | |
Type Of Material | Database/Collection of data |
Year Produced | 2020 |
Provided To Others? | Yes |
URL | https://www.repository.cam.ac.uk/handle/1810/311290 |
Description | Purdue Univ. |
Organisation | Purdue University |
Country | United States |
Sector | Academic/University |
PI Contribution | TEM done on our materials. |
Collaborator Contribution | Lots of TEM |
Impact | Many papers. Further EPSRC funding. |
Start Year | 2017 |
Description | memory collaboration with Prof. Quanxi Jia |
Organisation | University at Buffalo |
Country | United States |
Sector | Academic/University |
PI Contribution | biweekly meetings, provision of films for electrical measurements, general discussions |
Collaborator Contribution | biweekly meetings, electrical measurements, general discussions |
Impact | it is very multidisciplinary. There are a lot of other grants associated with it. We are doing a lot of outreach things associated with it, via Royal Academy of Engineering web events, fellows day, and via the cambridge science festival. |
Title | RESISTIVE SWITCHING DEVICES AND METHODS FOR THEIR MANUFACTURE AND OPERATION |
Description | The present invention relates to resistive switching devices and methods for the manufacture of resistive 5 switching devices and to methods for the operation of resistive switching devices. Such devices are of particular, although not necessarily exclusive, interest as non-volatile memory devices. |
IP Reference | 008149451 |
Protection | Patent application published |
Year Protection Granted | 2022 |
Licensed | No |
Impact | The application has just been filed. |
Description | Leverhulme research centre Liverpool, invited talk, 9/22 |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | talk on the work related to this grant |
Year(s) Of Engagement Activity | 2022 |
Description | MRS India meeting in Jodphur, Dec. 2022. GAve a prize lecture |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | MRS I International prize lecture. Talked on the memristor work funded by this grant. |
Year(s) Of Engagement Activity | 2022 |
Description | Resisistive switching |
Form Of Engagement Activity | Participation in an activity, workshop or similar |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Postgraduate students |
Results and Impact | i am organising this meeting on memory. We will all present many poster presentations at it. https://horizons.aip.org/materials-challenges/ |
Year(s) Of Engagement Activity | 2021 |
URL | https://horizons.aip.org/materials-challenges/ |
Description | cambridge memristor workshop, 7/9/22, which I organised |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | Local |
Primary Audience | Professional Practitioners |
Results and Impact | Talks at the meeting, aimed at understanding the mechanisms of our research |
Year(s) Of Engagement Activity | 2022 |
Description | talk at IWAM 2023 conference |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Professional Practitioners |
Results and Impact | Talks to researchers and school kids at IWAM 2023 |
Year(s) Of Engagement Activity | 2023 |
Description | talk at The Green Scene Webinar Series |
Form Of Engagement Activity | A talk or presentation |
Part Of Official Scheme? | No |
Geographic Reach | International |
Primary Audience | Postgraduate students |
Results and Impact | prestigious international meeting. Keynote talk. Hosted by Institute of Materials Research & Engineering (IMRE), A*STAR |
Year(s) Of Engagement Activity | 2013,2020 |
URL | https://www.a-star.edu.sg/imre/events/the-green-scene-webinar-series |